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    Text: Preliminary Datasheet RJK0451DPB 40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0073EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0451DPB R07DS0073EJ0200 PTZZ0005DA-A