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    RJK0451DPB

    Abstract: rjk0451dpb-00#j5 RJK0451DPB-00
    Text: Preliminary Datasheet RJK0451DPB R07DS0073EJ0102 Previous: REJ03G1763-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0451DPB R07DS0073EJ0102 REJ03G1763-0101) PTZZ0005DA-A RJK0451DPB rjk0451dpb-00#j5 RJK0451DPB-00

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    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0451DPB R07DS0073EJ0102 Previous: REJ03G1763-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0451DPB R07DS0073EJ0102 REJ03G1763-0101) PTZZ0005DA-A cur9044