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    H5N2522LS

    Abstract: H5N2522LSTL-E
    Text: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		H5N2522LS R07DS0057EJ0200 REJ03G1667-0100) PRSS0004AE-B dissipatio9044 H5N2522LS H5N2522LSTL-E PDF

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    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		H5N2522LS R07DS0057EJ0200 REJ03G1667-0100) PRSS0004AE-B PDF