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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP74N04YUG R07DS0017EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP74N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 5.5 mΩ MAX. (VGS = 10 V, ID = 37.5 A)


    Original     		NP74N04YUG R07DS0017EJ0100 NP74N04YUG AEC-Q101 PDF

    NP74N04YUG

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP74N04YUG R07DS0017EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP74N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 5.5 mΩ MAX. (VGS = 10 V, ID = 37.5 A)


    Original     		NP74N04YUG R07DS0017EJ0100 NP74N04YUG AEC-Q101 PDF