PSMN013-30LL
Abstract: No abstract text available
Text: PSMN013-30LL N-channel QFN3333 30 V 13 mΩ logic level MOSFET Rev. 04 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN013-30LL
QFN3333
PSMN013-30LL
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Untitled
Abstract: No abstract text available
Text: PSMN7R0-40LS N-channel QFN3333 40 V 7.0 mΩ standard level MOSFET Rev. 01 — 24 June 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN7R0-40LS
QFN3333
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Untitled
Abstract: No abstract text available
Text: PSMN014-60LS N-channel QFN3333 60 V 14 mΩ standard level MOSFET Rev. 01 — 25 June 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN014-60LS
QFN3333
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PHL3530AL
Abstract: No abstract text available
Text: PHL3530AL N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET Rev. 1 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications
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PHL3530AL
QFN3333
PHL3530AL
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Untitled
Abstract: No abstract text available
Text: FAX# 408 944-0970 TITLE 16 LEAD QFN 3x3mm PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # QFN33-16LD-PL-1 Rev A ECN 102711HC04 Originator S. YEH Change New release UNIT MM Reason Per George C.
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QFN33-16LD-PL-1
102711HC04
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Untitled
Abstract: No abstract text available
Text: FAX# 408 944-0970 TITLE 24 LEAD QFN 3x3mm PACKAGE (Flip Chip) OUTLINE & RECOMMENDED LAND PATTERN DRAWING # QFN33-24LD-PL-9 UNIT MM ° Rev A ECN 042412HC06 Originator S. YEH Change New release Reason Per George C.
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QFN33-24LD-PL-9
042412HC06
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Untitled
Abstract: No abstract text available
Text: PSMN017-30LL N-channel QFN3333 30 V 17 mΩ logic level MOSFET Rev. 01 — 26 May 2010 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN017-30LL
QFN3333
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20100622
Abstract: PSMN3R8-30LL
Text: PSMN3R8-30LL N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Rev. 3 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN3R8-30LL
QFN3333
20100622
PSMN3R8-30LL
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PSMN014-60LS
Abstract: No abstract text available
Text: PSMN014-60LS N-channel QFN3333 60 V 14 mΩ standard level MOSFET Rev. 2 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN014-60LS
QFN3333
PSMN014-60LS
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PSMN017-30LL
Abstract: No abstract text available
Text: PSMN017-30LL N-channel QFN3333 30 V 17 mΩ logic level MOSFET Rev. 03 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN017-30LL
QFN3333
PSMN017-30LL
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PSMN3R5-30LL
Abstract: diode L2.8
Text: PSMN3R5-30LL N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET Rev. 3 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN3R5-30LL
QFN3333
PSMN3R5-30LL
diode L2.8
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PSMN5R8-30LL
Abstract: No abstract text available
Text: PSMN5R8-30LL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Rev. 2 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN5R8-30LL
QFN3333
PSMN5R8-30LL
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Untitled
Abstract: No abstract text available
Text: UM10456 QFN3333 demonstration board Rev. 1 — 6 June 2011 User manual Document information Info Content Keywords QFN3333, Point-Of-Load, demonstration board Abstract The QFN3333 demonstration board is a single-phase buck converter design for demonstrating the performance of NXP Semiconductors’
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UM10456
QFN3333
QFN3333,
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Untitled
Abstract: No abstract text available
Text: PSMN9R0-30LL N-channel QFN3333 30 V 9 mΩ logic level MOSFET Rev. 03 — 23 June 2010 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN9R0-30LL
QFN3333
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PHL5830AL
Abstract: No abstract text available
Text: PHL5830AL N-channel QFN3333 30 V 5.8 mΩ logic level MOSFET Rev. 2 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications
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PHL5830AL
QFN3333
PHL5830AL
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PHL9030AL
Abstract: No abstract text available
Text: PHL9030AL N-channel QFN3333 30 V 9 mΩ logic level MOSFET Rev. 01 — 13 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications
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PHL9030AL
QFN3333
PHL9030AL
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Untitled
Abstract: No abstract text available
Text: Reportable Substances in Components Package Type : Component Weight : 0.0233 grams QFN33 3.0mmx3.0mm Lead #: No 1 2 3 3 4 5 6 16LD Material Content in % Molding Compound 46.46% Copper Alloy Frame 43.27% Silver Plating 0.47% Die Attach Material 0.73% Wire
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QFN33
QFN33-16LD-PBY-RS-C2S
030414HC02
Secret00
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Untitled
Abstract: No abstract text available
Text: FAX# 408 944-0970 TITLE 16 LEAD QFN 3x3mm PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # QFN33-16LD-PL-1 Rev A B ECN 102711HC04 102914PM02 Originator S. YEH E. dlSantos Change New release Update land pattern drawing UNIT MM Reason Per George C. Per George C.
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QFN33-16LD-PL-1
102711HC04
102914PM02
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PSMN9R0-30LL
Abstract: SOT873
Text: R R R R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D D R R A A A R R D D N-channel QFN3333 30 V 9 mΩ logic level MOSFET FT FT Objective data sheet FT Rev. 01 — 12 February 2010 D D D D D PSMN9R0-30LL R A F FT FT A A R R D D D D FT FT
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QFN3333
PSMN9R0-30LL
PSMN9R0-30LL
SOT873
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Untitled
Abstract: No abstract text available
Text: PSMN3R8-30LL N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN3R8-30LL
QFN3333
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Untitled
Abstract: No abstract text available
Text: PSMN3R5-30LL N-channel QFN3333 30 V 3.55 mΩ logic level MOSFET Rev. 2 — 15 June 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN3R5-30LL
QFN3333
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PHL17030AL
Abstract: No abstract text available
Text: PHL17030AL N-channel QFN3333 30 V 17 mΩ logic level MOSFET Rev. 01 — 13 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications
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PHL17030AL
QFN3333
PHL17030AL
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PHL3830AL
Abstract: No abstract text available
Text: PHL3830AL N-channel QFN3333 30 V 3.7 mΩ logic level MOSFET Rev. 1 — 18 August 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in computing and consumer applications
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PHL3830AL
QFN3333
PHL3830AL
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PSMN9R0-30LL
Abstract: No abstract text available
Text: PSMN9R0-30LL N-channel QFN3333 30 V 9 mΩ logic level MOSFET Rev. 04 — 7 July 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in QFN3333 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN9R0-30LL
QFN3333
PSMN9R0-30LL
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