Untitled
Abstract: No abstract text available
Text: T O S H IB A "TT {D IS C R E T E /O P T O } 9097250 TOSHIBA DISCRETE/OPTO » F I^ O T T S S O 99D 17084 QD17DÖ4 D-p-Hl'c?) TLPGI63,TLPGI64 GaP GREEN LIGHT EMISSION 3. I mm DIAMETER(TI) I FEATURES! . PURE COLOR . All Plastic Mold Type TLPG163 : Light Green Transparent Lens
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QD17DÃ
TLPGI63
TLPGI64
TLPG163
TLPG164
Ipa15
TLP0163
TLP0164
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTB143EK/DTB143EC/DTB143ES •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it
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DTB143EK/DTB143EC/DTB143ES
143EK
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
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PU4424
Abstract: 60V transistor npn 1a PU4124 PU3124
Text: Power Transistor Arrays PU3124, PU4124, PU4424 PU3124, PU4124, PU4424 Package D im ensions PU3124 U nit: mm 4.2max. 20.5max. Silicon NPN Triple-D iffused Planar D arlington Type Power A m plifier, Sw itching 0.8±0.25j • Features -0 .5 + 0 1 5 I ^ I ! -H - 1 .0 ± 0 .2 5
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PU3124,
PU4124,
PU4424
PU3124:
PU4124:
PU3124
PU4424
60V transistor npn 1a
PU4124
PU3124
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mask rom 4M
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E » DG17GDÔ b l 3 KM23C41 OOB G/FP SriGK CMOS MASK ROM 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.)
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DG17GDÃ
KM23C41
8/256K
120ns
50/iA
40-pin
KM23C4100B
7Tb414B
mask rom 4M
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PDF
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Untitled
Abstract: No abstract text available
Text: PARALLEL BIDIRECTIONAL FIFO 512 x 18 & 1024x18 IDT72511 IDT72521 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Two side-by-side FIFO m em ory arrays for bidirectional data transfers • 512 x 18-Bit - 512 x 18-Bit IDT72511 • 1024 x 18-Bit -1 0 2 4 x 18-Bit (IDT72521 )
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1024x18
IDT72511
IDT72521
18-Bit
18-Bit
IDT72511)
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