Q0S73 Search Results

BLV97

Abstract: IEC134
Contextual Info: PHILIPS INTERNATIONAL MIE D m 711002b Q0S73ÔÔ ö ‘' L IPHIN BLV97 r - 3 3 - // UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor in SOT171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.

Contextual Info: 0PA111 B U R R -B R O W N [ ] Low Noise Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 100% Tested, 8nvVfiz max 10kHz • LOW BIAS CURRENT: 1pA max • PRECISION INSTRUMENTATION • DATA ACQUISITION • LOW OFFSET: 250[iV max

Contextual Info: HA RR IS S E M I C O N D S E CT OR 4 3 D 2 2 7 1 D 0 S 7 3 Q S 2 • HAS 37E D Optoelectronic S p e c ific a tio n s _ T-4I-S3 AC Input Photon Coupled Isolator CNY35 — i.— -1 -j_ ■rtAA 3 1» 1 c ITOPV1EWI S 4 S \ G a A s Infared Em itting D iode s & N P N Silicon Photo-Transistor

00S73

Abstract: 6805L IC-3433 KM 3502 P
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT u P D 4 2 S 16 8 0 5 L , 4 2 1 6 8 0 5 L / 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE Description The /¿PD42S16805L, 4216805L are 2 097 152 words by 8 bits dynamic CMOS RAMs with optional hyper page

MCM54402AZ70

Abstract: MCM54402AN60
Contextual Info: MOTOROLA SC M E M O R Y / A S I C SfiE D b3b7251 0037370 03b B i H0T3 ^ " V MOTOROLA é> " « 2 « ? — J S " SEM ICO NDU CTO R TECHNICAL DATA MCM54402A Advance Information 4M x 1 CMOS Dynamic RAM Static Column The M C M 54402A is a 0.7|i C M OS high-speed dynam ic random a ccess memory. It is