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POWER400M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: VAO12FN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power400m Frequency Min. (Hz)8G Frequency Max. (Hz)12.4G Efficiency Min.6.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current85m Semiconductor MaterialSilicon Package StylePill-C	Original	VAO12FN20 Power400m Voltage90 Current85m	PDF
61c1024 Abstract: IS61C1024 Contextual Info: IS 61C1024 128K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY SEPTEMBER 1990 DESCRIPTION FEATURES The ISSI IS 6 lC l0 2 4 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol	OCR Scan	61C1024 power-400mW power-50 50jiW IS61C1024-S35W IS61C1024-L35W IS61C 1024-S45 IS61C1024-S55W 61c1024 IS61C1024	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: VAO12FN20 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power400m Frequency Min. (Hz)8G Frequency Max. (Hz)12.4G Efficiency Min.6.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current85m Semiconductor MaterialSilicon Package StylePill-C

Original

VAO12FN20 Power400m Voltage90 Current85m

PDF

61c1024

Abstract: IS61C1024
Contextual Info: IS 61C1024 128K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY SEPTEMBER 1990 DESCRIPTION FEATURES The ISSI IS 6 lC l0 2 4 is a high speed, low power, 131,072- word by 8- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technol

OCR Scan

61C1024 power-400mW power-50 50jiW IS61C1024-S35W IS61C1024-L35W IS61C 1024-S45 IS61C1024-S55W 61c1024 IS61C1024

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