PTFB092707FHV1R250XTMA1 Search Results

PTFB092707FHV1R250XTMA1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTFB092707FHV1R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF

PTFB092707FHV1R250XTMA1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PTFB092707FH Abstract: No abstract text available Text: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	PTFB092707FH PTFB092707FH 270-watt H-37288L-4/2	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

PTFB092707FH

Abstract: No abstract text available
Text: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Original

PTFB092707FH PTFB092707FH 270-watt H-37288L-4/2

PDF