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    PTFB092707FHV1 Price and Stock

    MACOM PTFB092707FH-V1-R0

    RF MOSFET LDMOS 28V H-37288L-4
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    MACOM PTFB092707FH-V1-R250

    RF MOSFET LDMOS
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    PTFB092707FHV1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFB092707FH-V1-R0 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37288L-4 Original PDF
    PTFB092707FHV1R0XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS H-37288L-4 Original PDF
    PTFB092707FH-V1-R250 Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF
    PTFB092707FHV1R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF

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    PTFB092707FH

    Abstract: No abstract text available
    Text: PTFB092707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 925 – 960 MHz Description The PTFB092707FH is a 270-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PTFB092707FH PTFB092707FH 270-watt H-37288L-4/2 PDF