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    PTFA261301E Search Results

    PTFA261301E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA261301E Infineon Technologies 2400 MHz to 2700 MHz; Package: PG: H-30260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,620.0 - 2,680.0 MHz; P1dB (typ): 130.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA261301E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 130W H-30260-2 Original PDF
    PTFA261301EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 130W H-30260-2 Original PDF

    PTFA261301E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    elna 50v

    Abstract: No abstract text available
    Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G


    Original     		PDF PTFA261301E PTFA261301F 130-watt, CDMA2000, H-30260-2 H-31260-2 elna 50v

    Untitled

    Abstract: No abstract text available
    Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized


    Original     		PDF PTFA261301E PTFA261301E 130-watt, CDMA2000

    ALT230

    Abstract: No abstract text available
    Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA and CDMA2000 operation


    Original     		PDF PTFA261301E PTFA261301F 130-watt, CDMA2000 ALT230

    LM7805

    Abstract: No abstract text available
    Text: PTFA261301E Thermally-Enhanced High Power RF LDMOS FET 130 W, 2.62 – 2.68 GHz PTFA261301E Package 30260 Description The PTFA261301E is a thermally-enhanced 130-watt, internally-matched GOLDMOS FET intended for ultra-linear applications. It is characterized


    Original     		PDF PTFA261301E PTFA261301E 130-watt, CDMA2000 LM7805

    PTFA261301E

    Abstract: No abstract text available
    Text: Preliminary PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz PTFA261301E* Package 30260 Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications.


    Original     		PDF PTFA261301E PTFA261301F 130-watt, CDMA2000 PTFA261301E* PTFA261301F*

    BCP56

    Abstract: LM7805 PTFA261301E PTFA261301F IM325 130-watt PD449 2680 marking
    Text: PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt, internally-matched GOLDMOS FETs intended for ultra-linear applications. They are characterized for CDMA, CDMA2000, Super3G


    Original     		PDF PTFA261301E PTFA261301F PTFA261301E PTFA261301F 130-watt, CDMA2000, H-30260-2 H-31260-2 BCP56 LM7805 IM325 130-watt PD449 2680 marking

    PTFA261301E

    Abstract: 520004
    Text: Preliminary PTFA261301E PTFA261301F Thermally Enhanced High Power RF LDMOS FETs 130 W, 2.62–2.68 GHz Description Features The PTFA261301E and PTFA261301F are thermally enhanced 130–watt, internally matched GOLDMOS FETs intended for ultra-linear applications.


    Original     		PDF PTFA261301E PTFA261301F 520004

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503