Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNA1801L Search Results

    SF Impression Pixel

    PNA1801L Price and Stock

    Panasonic Electronic Components PNA1801L

    SENSOR PHOTO 800NM TOP VIEW T1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PNA1801L
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Panasonic Electronic Components PNA1801LS

    SENSOR PHOTO 800NM TOP VIEW T1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PNA1801LS
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Panasonic Electronic Components PNA1801L00NC

    SENSOR PHOTO 800NM TOP VIEW T1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PNA1801L00NC
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Panasonic Electronic Components PNA1801LS0NC

    SENSOR PHOTO 800NM TOP VIEW T1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PNA1801LS0NC
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    PNA1801L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PNA1801L Panasonic Silicon NPN Phototransistor Original PDF
    PNA1801L00NC Panasonic Electronic Components Sensors, Transducers - Optical Sensors - Phototransistors - NPN PHOTOTRANS 850NM T1 Original PDF
    PNA1801LS Panasonic Electronic Components Sensors, Transducers - Optical Sensors - Phototransistors - NPN PHOTOTRANS 800NM T1 Original PDF
    PNA1801LS0NC Panasonic Electronic Components Sensors, Transducers - Optical Sensors - Phototransistors - NPN PHOTOTRANS 850NM T1 Original PDF

    PNA1801L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs


    Original
    PDF 2002/95/EC) PNA1801L PN168)

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNA1801L Silicon NPN Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 High sensitivity 15.0±1.0 4.5±0.3 Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost


    Original
    PDF PNA1801L

    PN168

    Abstract: PNA1801L PNA1801
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type Unit: mm 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost


    Original
    PDF 2002/95/EC) PNA1801L PN168) PN168 PNA1801L PNA1801

    PN168

    Abstract: PNA1801L PNA1801
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type Unit: mm 5.0±0.2 • Features 4.5±0.3 15.0±1.0 M Di ain sc te on na tin nc ue e/ d • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs


    Original
    PDF 2002/95/EC) PNA1801L PN168) PN168 PNA1801L PNA1801

    PN168

    Abstract: PNA1801L
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs


    Original
    PDF 2002/95/EC) PNA1801L PN168) PN168 PNA1801L

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNA1801L PN168 Silicon planar type Unit: mm For optical control systems 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost • φ3 shell type plastic package


    Original
    PDF PNA1801L PN168)

    PN168

    Abstract: PNA1801L
    Text: Phototransistors PNA1801L PN168 Silicon planar type Unit: mm 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost • φ3 shell type plastic package


    Original
    PDF PNA1801L PN168) PN168 PNA1801L

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type Unit: mm For optical control systems 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs


    Original
    PDF 2002/95/EC) PNA1801L PN168)

    PN168

    Abstract: PNA1801L
    Text: Phototransistors PNA1801L PN168 Silicon NPN Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 High sensitivity 15.0±1.0 4.5±0.3 Wide spectral sensitivity, suited for detecting GaAs LEDs


    Original
    PDF PNA1801L PN168) PN168 PNA1801L

    PNA1801L

    Abstract: PN168 PNA1801
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original
    PDF 2002/95/EC) PNA1801L PN168) PNA1801L PN168 PNA1801

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    TC4009BP

    Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
    Text: 光センサ ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


    Original
    PDF 050106CH1 TLP1025 TLP1029 TLP1033A TLP1034 TLP1201A TLP1201A TLP1204 TC4009BP DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    PHOTO TRANSISTOR 940nm to-18

    Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
    Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,


    Original
    PDF CND0204ACT-ND CND0215ACT-ND CND0208ACT-ND CND0214ACT-ND CND0209ACT-ND CND0216ACT-ND CND0204ATR-ND CND0215ATR-ND CND0208ATR-ND CND0214ATR-ND PHOTO TRANSISTOR 940nm to-18 cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


    Original
    PDF PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F