PDM41257SA Search Results

Contextual Info: PDM41257 256K Static RAM 256K x 1-Bit Description Features n High-speed access times Com’l: 7, 8, 10, 12 and 15 ns Industrial: 8, 10, 12 and 15 ns n Low power operation typical - PDM41257SA Active: 400 mW Standby: 150 mW - PDM41257LA Active: 350 mW Standby: 25 mW

din 41257

Abstract: 41257 C001 ZI170 PDM41257
Contextual Info: 256K Static RAM 256K x 1-Bit PDM41257SA PDM41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15,20, 25,35,45, and 55ns □ Low power operation - PDM41257SA Active: 400mW typ. Standby: 150 mW (typ.) - PDM41257LA

Contextual Info: PDM41257SA PDM41257LA Paradigm ' b^MlD^Q GDDÜ33S 414 « P A T M ö K Strtie RAM 256K x 1-Bit Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 , and 35ns Industrial: 1 2 ,1 5 ,2 0 ,2 5 , and 35ns

Contextual Info: PARADIGM TECHNOLOGY I NC SGE D bTMlO^O OOOOOH 3 « P A T i T ^ V PARADEN! 256K Static RAM 256K x 1-Bit o S PDM41257SA PDM41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 , 35,4 5 , and 55ns

Contextual Info: p a r a d k m 256K Static RAM 256K x 1-Bit PDM41257SA PDM41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 1 2 ,1 5 ,2 0 ,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41257SA Active: 400mW typ. Standby: 150 mW (typ.)

Contextual Info: PARADIGM 256K Static RAM 256K x 1-Bit PDM 41257SA PDM 41257LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20,25, 35,45, and 55ns □ Low power operation - PDM41257SA Active: 400mW typ. Standby: 150 mW (typ.)

41257

Abstract: IPDM41257SA
Contextual Info: PARADIGM 256K Static RAM 256K x 1-Bit PDM41257SA PDM41257LA Features Description □ High speed access times The PD M 41257 is a high perform ance CMOS static RAM organ­ ized as 262,144 x 1 bits. This product is produced in Paradigm 's proprietary CMOS technology which offers the designer the

Contextual Info: Pa r a d ig m PDM41257 256K Static RAM 256K x 1-Bit Features D escription □ High speed access times Com'l: 8 ,1 0 ,1 2 ,1 5 , 20 and 25 ns Industrial: 10,12,15, 20, and 25 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bits. This product is

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

Contextual Info: PDM41257 256K Static RAM 256K x 1-Bit 1 Features Description • High-speed access times Com’l: 7, 8, 10, 12 and 15 ns Industrial: 8, 10, 12 and 15 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. This product is produced in Paradigm’s proprietary CMOS

PDM41257

Contextual Info: Paradigm PDM41257 256K Static RAM 256K x 1-Bit Features Description □ High-speed access times Com'l: 7, 8 ,1 0 ,1 2 and 15 ns Industrial: 8 ,1 0 ,1 2 and 15 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. This product is

TMS6207-35

Abstract: 24PIN MT5C2561-20 MT5C2561-30 MT5C2561-35 MT5C2561-45 PDM41257LA-12 PDM41257LA-15 PDM41257LA-1D 24PIN 1800
Contextual Info: - 108 — 2 5 6 K m £ £ i&mm CO A 4 TAAC •ax ns TCAC max (ns) TOE max (ns) CMOS S t a t i c RAM ( 2 6 21 4 4 x 1 ) 2 4 P I N À 7 f TOH •in (ns) TOD ■ax (ns) TWP ■in (ns) TDS miri (ns) TDH •in (ns) TWD ■in (ns) TUR max (ns) V D D or V C C (V)

Contextual Info: Paradigm ' PDM41257 256K Static RAM 256K x 1-Bit Features Description □ High-speed access times Com'l: 7, 8 ,10,12 and 15 ns Industrial: 8 ,10,12 and 15 ns The PDM41257 is a high-performance CMOS static RAM organized as 262,144 x 1 bit. Writing to this device is accomplished when the write enable WE

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in