PD2111
Abstract: 403CNQ100PBF 403CNQ 40HF P460
Text: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A
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PD-21111
403CNQ100PbF
200Apk,
403CNQ.
PD2111
403CNQ100PBF
403CNQ
40HF
P460
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800H
Abstract: HN29V51211 HN29V51211T-50
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21116 04/06 HFA210NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications
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PD-21116
HFA210NJ60CPbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21111 12/05 403CNQ100PbF SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Major Ratings and Characteristics Characteristics Description/ Features Values Units IF AV Rectangular 400 A VRRM 100 V 25,500 A
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PD-21111
403CNQ100PbF
200Apk,
403CNQ.
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21110 12/05 401CNQ.PbF SERIES SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Description/ Features Major Ratings and Characteristics Characteristics Values Units 400 A VRRM range 40 - 45 V IFSM @ tp = 5 µs sine
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PD-21110
401CNQ.
08-Mar-07
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800H
Abstract: HN29V51211T-50H
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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AH10T
Abstract: hn29w12811t-50 Hitachi DSA00170
Text: HN29W12811 シリ−ズ 128M AND type Flash Memory More than 8,029-sector 135,657,984-bit ADJ-203-551A (Z) ’00. 9. 4 暫定仕様 Rev. 0.1 概要 HN29W12811 シリ−ズは単一電源(3.3V)で自動書き込みおよび自動消去が可能な多値 AND型メモリセル
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HN29W12811
029-sector
984-bit)
ADJ-203-551A
50/80ns
HN29W12811T-50
HN29W12811T-80
AH10T
hn29w12811t-50
Hitachi DSA00170
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HFA320NJ40CPBF
Abstract: IRFP250
Text: Bulletin PD-21115 04/06 HFA320NJ40CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications
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PD-21115
HFA320NJ40CPbF
12-Mar-07
HFA320NJ40CPBF
IRFP250
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IRFP250
Abstract: No abstract text available
Text: Bulletin PD-21116 04/06 HFA210NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications
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PD-21116
HFA210NJ60CPbF
12-Mar-07
IRFP250
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Hitachi DSA00281
Abstract: No abstract text available
Text: HN29W25611 Series 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-995C (Z) Rev. 2.0 May. 11, 2001 Description The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are
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HN29W25611
057-sector
072-bit)
ADE-203-995C
D-85622
Hitachi DSA00281
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21117 04/06 HFA280NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications
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PD-21117
HFA280NJ60CPbF
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800H
Abstract: HN29V102414 HN29V102414T-50 Hitachi DSA0047
Text: HN29V102414 Series 1G AND type Flash Memory More than 32,113-sector 542,581,248-bit x 2 ADE-203-1265A (Z) Preliminary Rev. 0.1 Jul. 25, 2001 Description The Hitachi HN29V102414 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V102414
113-sector
248-bit)
ADE-203-1265A
800H
HN29V102414T-50
Hitachi DSA0047
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K2111
Abstract: 800H HN29V25611AT-50H Hitachi DSA00480
Text: HN29V25611AT-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The
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HN29V25611AT-50H
057-sector
072-bit)
ADE-203-1334A
HN29V25611AT-50H
K2111
800H
Hitachi DSA00480
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21119
Abstract: MBR0530PBF MBR0530
Text: Bulletin PD-21119 rev. A 08/06 MBR0530PbF SCHOTTKY DIODE 0.5 Amp IF AV = 0.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Value Units I F(AV) (DC) 0.5 A VRRM 30 V IFSM @ tp= 10 ms sine 10 A 0.35 V - 65 to 150 °C VF
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PD-21119
MBR0530PbF
12-Mar-07
21119
MBR0530PBF
MBR0530
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40HF
Abstract: P460 409cnq150pbf
Text: Bulletin PD-21112 12/05 409CNQ.PbF SERIES SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular 400 A 135 - 150 V 20000
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PD-21112
409CNQ.
200Apk,
12-Mar-07
40HF
P460
409cnq150pbf
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IRFP250
Abstract: TA 21117
Text: Bulletin PD-21117 04/06 HFA280NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications
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PD-21117
HFA280NJ60CPbF
12-Mar-07
IRFP250
TA 21117
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800H
Abstract: HN29V25611A HN29V25611AT-50 D2111
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Hitachi DSA00276
Abstract: No abstract text available
Text: HN29V51211 Series 512M AND type Flash Memory More than 32,113-sector 542,581,248-bit ADE-203-1221A (Z) Preliminary Rev. 0.1 May. 10, 2001 Description The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are
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HN29V51211
113-sector
248-bit)
ADE-203-1221A
D-85622
Hitachi DSA00276
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O2-A2
Abstract: 800H HN29V51211 HN29V51211T-50
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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800H
Abstract: ADE-203-1178A HN29W25611T HN29W25611T-50H sa 2111 Hitachi DSA00358
Text: HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector 271,299,072-bit ADE-203-1178A (Z) Rev. 1.0 May. 10, 2000 Description The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
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HN29W25611T-50H
057-sector
072-bit)
ADE-203-1178A
HN29W25611T
16nents
800H
ADE-203-1178A
HN29W25611T-50H
sa 2111
Hitachi DSA00358
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21117 04/06 HFA280NJ60CPbF HEXFREDTM Ultrafast, Soft Recovery Diode Features LUG TERMINAL ANODE 1 • Very Low Qrr and trr • Lead-Free LUG TERMINAL ANODE 2 Benefits • Reduced RFI and EMI • Reduced Snubbing BASE COMMON CATHODE Description/ Applications
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PD-21117
HFA280NJ60CPbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21110 12/05 401CNQ.PbF SERIES SCHOTTKY RECTIFIER 400 Amp LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE Description/ Features Major Ratings and Characteristics Characteristics Values Units 400 A VRRM range 40 - 45 V IFSM @ tp = 5 µs sine
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PD-21110
401CNQ.
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D2111A
Abstract: uPD2111 uPD2111AL-4 SP-2111 sp2111 uPD2111AL-2 2111A
Text: SEC NEC Microcomputers, Inc. /x PD2111 a l /¿PD2111AL-2 /I.PD2111AL-4 1024 BIT 256 x 4 STATIC MOS RAM WITH COMMON I/O AND OUTPUT DISABLE D E S C R IP T IO N The ¡J.P D 2111 A L is a 256 words by 4 bits static random access m em ory fabricated w ith N-channel MOS technology. It uses fu lly static c irc u itry and therefore requires no
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uPD2111
uPD2111AL-2
uPD2111AL-4
PD2111AL
MPD2111ALC
SP2111-8-77-G
D2111A
SP-2111
sp2111
2111A
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Microwave PIN diode
Abstract: PD650 PD217 PD350 PD450 PD630 PDF311 Micro-Precision Technologies PD2112 PD1050
Text: 7 P MICROWAVE PIN DIODE DRIVERS w l — FEATURES: • -6 5 ° TO +150°C STORAGE TEMP RANGE • -5 5 ° TO +125°C OPERATING TEMP RANGE MODEL OUTPUT CURRENT DC mA POSITIVE NEGATIVE MIN MAX MIN MAX MIN PEAK mA) POS NEG OUTPUT VOLTAGE OPEN CKT (VEE = -1 2 )
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MIL-STD-883
PD1111
PD2112
PD217
PD3113
Microwave PIN diode
PD650
PD350
PD450
PD630
PDF311
Micro-Precision Technologies
PD1050
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