PCA5075 Search Results

circuit diagram of pi controller using op-amp

Abstract: LTA 702 N PCA5075 SSOP20
Contextual Info: NAPC/PHILIPS SEMICOND fc,7E D • bbS3T24 QDST17H BT1 « S I C 3 Philips Semiconductors RF Communications Products Preliminary specification ■ Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER

PCA5075

Abstract: SSOP20
Contextual Info: PHILIPS INTERNATIONAL b?E D • ?110A2b DQbSlSO Sfil « P H I N Philips Sem iconductors RF Communications Products Preliminary specification Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER MIN. TYP. MAX. UNIT

tl 2345 ml

Abstract: C529 c528 transistor SWITCHING TRANSISTOR C144 C134 C144 C530 R546 SA1620 SA1620BE
Contextual Info: Product specification Philips Semiconductors Low voltage GSM front-end transceiver DESCRIPTION SA1620 • Feedthrough attenuation LNA1 to Rx mixer > 35dB The SA1620 is a combined receive Rx and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low

LQFP-48 footprint

Abstract: schematics for a PA amplifier class c 7x7x1.4 n004 schematics for a PA amplifier 27 Mhz power amplifier power amplifier 33PF C5000 CGY2010G
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% • Integrated power sensor driver The CGY2010G and CGY2011G are GSM class 4 GaAs Monolithic Microwave Integrated Circuits (MMICs) power

gsm signal amplifier circuit diagram

Abstract: MGD629
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Am plifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier

uc IR for Tx, RX

Abstract: GSM Transceiver 1994
Contextual Info: Objective spécification Philips Semiconductor« Low-voltage GSM front-end transceiver SA1620 DESCRIPTION a Absolute gain tolerance in the Rx path: ±2dB active mode Tha SA1620 Is a combined rscwv* (Rx) and transmit (Tx) front-end tor GSM cellular telephones. Tha racalva path contains two low

ICS 1210 Pressure Sensor

Abstract: 1210 pressure sensor ics gsm transceiver schematics for a PA amplifier design of multi section directional coupler gsm signal amplifier pressure sensor sp 20 BSR14 CGY2010G CGY2011G
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2010G; CGY2011G GSM 4 W power amplifiers Objective specification Supersedes data of 1995 Oct 25 File under Integrated Circuits, IC17 1996 Jul 08 Philips Semiconductors Objective specification GSM 4 W power amplifiers CGY2010G; CGY2011G

C144 TRANSISTOR RESISTOR

Abstract: SWITCHING TRANSISTOR C144 C144 SA1620 SA1620BE SA1638 LNA21 philips gmsk
Contextual Info: Philips Sem iconductors O bjective specification Low-voltage GSM front-end transceiver DESCRIPTION SA1620 • Absolute gain tolerance in the Rx path: ±2dB active mode The SA1620 is a combined receive (Rx) and transmit (Tx) front-end for GSM cellular telephones. The receive path contains two low

2SA1638

Abstract: SAW Filter 900MHz SA8025
Contextual Info: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with

Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

design of multi section directional coupler

Abstract: pressure sensor sp 20 schematics for a PA amplifier CGY2020G LQFP48 PCA5075 PHP109 BAS70 BSR14 pressure sensor sp 13
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2020G DCS 2 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 17 Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42%

2SA1638

Abstract: DCS1800 SA1620 SA1638 SA1638BE
Contextual Info: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with

HF power amplifier

Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

2SA1638

Abstract: resistor var 20k DCS1800 SA1620 SA1638 SA1638BE capacitor 106 35K
Contextual Info: INTEGRATED CIRCUITS SA1638 Low voltage IF I/Q transceiver Product specification IC17 Data Handbook Philips Semiconductors 1997 Sept 03 Philips Semiconductors Product specification Low voltage IF I/Q transceiver SA1638 • High performance on-board integrated receive filters with

CGY2020G

Abstract: LQFP48 LQFP64 LQFP80 PCA5075 SMD0603 nrx 34
Contextual Info: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2020G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 42% The CGY2020G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply.

Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2023G DCS 2 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Aug 14 Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38%

transistor C535

Abstract: c535 transistor transistor C635 IR546 transistor C618 C644 transistor transistor c380 C645 diode c530 TRANSISTOR C535
Contextual Info: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification Supersedes data of 1996 Oct 08 IC17 Data Handbook Philips Semiconductors 1997 May 22 Philips Semiconductors Product specification Low voltage GSM front-end transceiver SA1620

LNA12

Abstract: rf transmitter receiver 1800Mhz xl 1225 transistor SA1620BE c530 TRANSISTOR
Contextual Info: Philips Semiconductors Product specification Low voltage GSM front-end transceiver DESCRIPTION SA1620 • Feedthrough attenuation LNA1 to Rx mixer > 35dB The SA1620 is a combined receive {Rx and transmit Tx) front-end for GSM cellular telephones. The receive path contains two low

1nt02

Abstract: g110 transistor C618 C134 C144 SA1620 SA1620BE SA1638 400MHZ transceiver DSC1800
Contextual Info: INTEGRATED CIRCUITS SA1620 Low voltage GSM front-end transceiver Product specification 1995 Feb 23 IC17 Handbook Philips Semiconductors PHILIPS This Material Copyrighted By Its Respective Manufacturer PHILIPS Philips Semiconductors Product specification Low voltage GSM front-end transceiver

CGY2013G

Abstract: LQFP48 PCA5075 SA1620 SMD0603
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

CGY2023G

Abstract: LQFP48 LQFP64 LQFP80 PCA5075
Contextual Info: Philips Semiconductors Objective specification DCS 2 W power amplifier CGY2023G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 38% The CGY2023G is a DCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.