Qbh-133
Abstract: QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630
Text: PHOENIX-M/A-COM Amplifier Direct Replacement List PHOENIX- AMPLIFONIX M/A-COM MODEL# MODEL# PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PAIO PA100 PAI 10 PAI 12 PA 120 PA 150 PA 162 PA 170 PA 180 PA181 PA 190 PA191 PA211 PA219 TM7302 TM6505 TM6511 TM9717
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PA002
PA005
PA010
PAO15
PA030
PA050
PA055
PA056
PA100
PA181
Qbh-133
QBH-104
PA381
QBH198
qbh-109
amplifonix
PA710
qbh-110
QBH109
PA630
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PA1813
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and
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PA1813
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upa1817
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1817 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1817 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and
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PA1817
PA1817
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and
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PA1819
PA1819
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D1380
Abstract: Nec 658
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and
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PA1814
PA1814
D1380
Nec 658
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d1296
Abstract: PA1812 a5269
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and
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PA1812
Abstract: uPA1812 UPA1812GR-9JG N354
Text: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor jjl PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The//PA1812 is a switching device which can be driven directly by a 4V power source. The PA1812 features a low on-state resistance and excellent
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uPA1812
The//uPA1812
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UPA1812GR-9JG
N354
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PA1810
Abstract: 4360M
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1810 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1810 is a switching device which can be driven directly by a 2.5 V power source. The µPA1810 features a low on-state resistance and
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PA1810
4360M
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PA1815
Abstract: UPA1815GR
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and
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PA1816
Abstract: g1625
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and
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d1296
Abstract: PA1812
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and
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PA1813
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and
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IF33
Abstract: No abstract text available
Text: ~PHO£m< PA181 Series 10-1000 MHz. Cascadable Amplifier M/C/?OmMECap. Typical Performance Curves - -55°C +25°C - A - +85° C See Short Form Chart and Mechanical Section for available outline drawings. Features: typical values • ■ ■ ■ Wide Bandw idth. 10-1000 MHz.
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PA181
IF33
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g1625
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1818 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and
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PA1816
Abstract: g1625
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1816 P チャネル MOS FET スイッチング用 µPA1816 は，1.8 V 電源系による直接駆動が可能なス 外形図（単位：mm） イッチング素子です。
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upa1817
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1817 P チャネル MOS FET スイッチング用 µPA1817 は，2.5 V 電源系による直接駆動が可能なス 外形図（単位：mm） イッチング素子です。
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G16253JJ1V0DS
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D1182
Abstract: PA1811
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1811 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1811 is a switching device which can be driven directly by a 2.5-V power source. The µPA1811 features a low on-state resistance and
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D1380
Abstract: PA1815 UPA1815GR
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and
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UPA1815GR
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UPA1815GR
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5 V power source. The µPA1815 features a low on-state resistance and
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Untitled
Abstract: No abstract text available
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1819 P チャネル MOS FET スイッチング用 外形図（単位: mm） µ PA1819 は，4.0 V 電源系による直接駆動が可能なスイッチ ング素子です。
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PA1819
PA1819
PA1819GR-9JG
G16267JJ1V0DS
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PA1819
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PACKARD 58 JC3
Abstract: PACKARD 58 vch 6A14VT JC201 14VT packard 56 SERIES current rating
Text: V-Series Switch Product Highlights: Maximum sealing protection with dual seals around lamps and rocker stem certified to IP66 & IP68. Optional panel seals for additional protection. Silver plated butt contact mechanism provides 50 to 100 thousand electrical cycles and a variety of different
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PA1813
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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