P2HM505HA Search Results

Contextual Info: PDM505HA P2HM505HA MOSFET 50A 500V P2HM505HA PDM505HA 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧

Contextual Info: MOSFET 50A 500V 1 PDM505HA P2HM505HA

P2HM505HA

Abstract: PDM505HA
Contextual Info: PDM505HA P2HM505HA MOSFET 50A 500V P2HM505HA P2HM505HA PDM505HA 108.0 108.0 質量 Approximate Weight :220g 質量 Approximate Weight :220g •最大定格 Maximum Ratings 項 目 Rating ドレイン・ソース間電圧 VDSS Drain-Source Voltage ゲート・ソース間電圧

Contextual Info: MOSFET MODULE P2HM505HA Dual 50A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible

Contextual Info: MOSFET PDM505HC/HA P2HM505HA 50A 500 V •回路図 CIRCUIT PD P2H Rg MOS SBD 1 D2S1 Rg G2 S2 FRD 2 (S2) 3 SBD (D1) MOS FRD MOS SBD D2 S1 G1 G2 S2 FRD S2 FRD D1 SBD MOS Rg S1 S1 G1 Rg ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PDM505HA

100 25A

Abstract: P2HM505HA
Contextual Info: MOSFET MODULE P2HM505HA Dual 50A /500V OUTLINE DRAWING FEATURES * Dual MOS FETs Separated Circuit Dimension mm 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible

Contextual Info: MOSFET MODULE P2HM505HA Dual 50A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ