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    NTE276 Search Results

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    NTE276 Price and Stock

    NTE Electronics Inc NTE276

    Thyristor, gto,1.2Kv V(Drm),to-66 |Nte Electronics NTE276
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE276 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Bristol Electronics NTE276 2 1
    • 1 $9
    • 10 $9
    • 100 $9
    • 1000 $9
    • 10000 $9
    		Buy Now
    Quest Components NTE276 8
    • 1 $12.7935
    • 10 $6.3968
    • 100 $6.3968
    • 1000 $6.3968
    • 10000 $6.3968
    		Buy Now
    NTE276 1
    • 1 $12
    • 10 $12
    • 100 $12
    • 1000 $12
    • 10000 $12
    		Buy Now
    TME NTE276 5 1
    • 1 $9.04
    • 10 $7.99
    • 100 $7.99
    • 1000 $7.99
    • 10000 $7.99
    		Buy Now

    NTE Electronics Inc NTE2764

    EPROM - 64K - NMOS - 200ns - 28-lead DIP - UV Erasable
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE2764 5
    • 1 $22.85
    • 10 $18.46
    • 100 $16.34
    • 1000 $15.44
    • 10000 $15.44
    		Buy Now

    NTE276 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE276 NTE Electronics SCR 1.25KV TO66 Original PDF
    NTE2764 NTE Electronics Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Original PDF

    NTE276 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2764

    Abstract: No abstract text available
    Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers


    Original     		PDF NTE2764 200ns NTE2764 NTE2764s

    NTE2764

    Abstract: No abstract text available
    Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers


    Original     		PDF NTE2764 200ns NTE2764 NTE2764s

    Untitled

    Abstract: No abstract text available
    Text: NTE276 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.2k V(RRM) Max. (V) I(T) Rated Maximum (A)5.0² @Temp. (øC) (Test Condition) I(TSM) Max. (A)80 @ t(w) (s) (Test Condition) I(GT) Max. (A)120m V(GT) Max.(V)1.5 I(H) Max. (A) Holding Current300mÂ


    Original     		PDF NTE276 Current300mà StyleTO-66 Code3-23

    NTE276

    Abstract: SCR Inverter datasheet
    Text: NTE276 Silicon Controlled Rectifier SCR Gate Controlled Switch Features: D Gate Turn−Off Thyristor D High Speed Power Switching D TV Horizontal Output D Inverter and Converter Application D Supplied in a Japanese TO66 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


    Original     		PDF NTE276 250mA NTE276 SCR Inverter datasheet

    NTE199

    Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page MPX2010GS MPX2050DP MPX2050GP MPX2100A MPX2100AP 15.08 17.27 17.69 17.74 14.57 MOT


    Original     		PDF MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K

    Untitled

    Abstract: No abstract text available
    Text: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7


    OCR Scan     		PDF 1400-BIT 14-LEAD NTE2764 NTE2800 NTE2732A 200nS 28-LEAD 24-LEAD 40-LEAD NTE6502

    NTE4256

    Abstract: No abstract text available
    Text: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1


    OCR Scan     		PDF NTE2732A 24-Lead 200ns NTE2764 28-Lead NTE2800 14-Lead 1400-Bit NTE4256