NP88N055DHE Search Results

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES

D1414

Abstract: NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

d1414

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

D1414

Abstract: NEC 88n055 NP88N055KHE-E-1-AY NP88N055MHE 88N055 88n05 NP88N055NHE NP88N055DHE NP88N055EHE NP88N055EHE-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

D1414

Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055KHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE,NP88N055DHE,NP88N055EHE,NP88N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

D1414

Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE
Contextual Info: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

NEC 88n055

Abstract: D1414 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE NP88N055KHE-E1-AY NP88N055KHE-E2-AY
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TO-252 MOSFET p channel

Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
Contextual Info: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering

mc10087f1

Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
Contextual Info: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.

2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation

TO-252 MOSFET p channel

Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
Contextual Info: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive