MV21SC14 Search Results

30yW

Abstract: 2114L MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3 UPD444
Contextual Info: MV21SC14 A PLESSEY ADVANCE INFORMATION S e m ic o n d u c t o r s . CMOS Advance inform ation is issued to advise Customers of new additions to the Plessey S em iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we w ould expect th is performance data to

2114L

Abstract: MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3
Contextual Info: # 8 ü i l S S S ^ 2 , 0 CMOS çt/. 003698 ? - V MV21SC14 1024 x 4 BIT STATIC RAM T he MV21SC14 is a h ig h speed, lo w pow e r 4096-bit Static R andom Access M em ory, organised as1024 w ord s b y 4-bits and fabricated w ith th e IS O -C M O S process. It is a fu lly static

ram 2114L

Abstract: 2114L UPD444 cn plessey CM09 MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3
Contextual Info: MV21SC14 A PLESSEY w Sem iconductors. OVIOS ADVANCE INFORMATION Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to

Contextual Info: ^ ^ S m te o n d u c to r * 003698 OVIQS a,VoA MV21SC14 1024 x 4 BIT STATIC R A M The MV21SC14 is a high speed, low power 4096-bit Static Random Access Memory, organised as1024 words by 4-bits and fabricated with the ISO -CM O S process. It is a fully static

30yW

Contextual Info: MV21SC14 A PLESSEY W Semiconductors. ADVANCE INFORMATION CMOS Advance inform ation is issued to advise Customers of new additions to the Plessey Sem iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we would expect th is performance data to