MSM514256B Search Results

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb

Contextual Info: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight

Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 2321B-xxY S18/D S18 is a fully decoded 524,288-w ord x 36-bit CM OS Dynamic Random Access M em ory M odule composed of sixteen 1-Mb DRAM s in SOJ MSM514256B packages and eight

Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/D S18 is a fully decoded 524,288-w ord x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 1-Mb DRAMs in SOJ MSM514256B packages and eight

Contextual Info: MB81C4256-10PSZ IL00 * C-MOS 1M 262, 144 X 4 -BIT DYNAMIC RAM -SIDE VIEW- 1 2 GND 4 5 6 3 OE CAS D3 D4 7 *NC 9 10 11 8 D1 D2 WE RAS 12 13 14 16 17 18 19 20 12 13 14 15 A0 A1 A2 A3 *NOTE 11 VDD (+5V) 16 17 18 19 20 A4 A5 A6 A7 A8 ; PIN 10 OF MSM514256B/BL SERIES

Contextual Info: O K I semiconductor MSM514256B/BL 262,144-W ord x 4-Bit DYNAMIC RAM GENERAL DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

met esso

Contextual Info: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/ DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight

Contextual Info: O K I Semiconductor MSC2322B-XXYS20/DS20 524,288-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 2322B-xxY S20/D S20 is a fully decoded 524,288-word x 40-bit CM OS D ynam ic Random Access M em ory Module composed of twenty 1-Mb DRAM s in SOJ MSM514256B packages mounted

SC2330B

Abstract: SC2330
Contextual Info: O K I Semiconductor MSC2330B-XXYS4/KS4 524,288-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2330B-xxYS4/KS4 is a fully decoded 524,288-word x 8-bit CMOS Dynamic Random Access Memory Module composed of four 1-Mb DRAMs in SOJ MSM514256B packages mounted with four

sc2322

Contextual Info: O K I Semiconductor MSC2322B-XXYS20/PS20 524,288-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2322B-xxYS20/DS20 is a fully decoded 524,288-word x 40-bit CMOS Dynamic Random Access Memory Module composed of twenty 1-Mb DRAMs in SOJ MSM514256B packages mounted

Contextual Info: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight

Contextual Info: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2333B-xxYS16/D S16 is a fully decoded 524,288-w ord x 32-bit CMOS Dynamic Random Access Memory Module composed of sixteen 1-Mb DRAMs in SOJ MSM514256B packages mounted

Contextual Info: O K I Semiconductor MSC2331B-XXYS3/KS3 262,144-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2331B-xxY S3/K S3 is a fully decoded 262,144-word x 9-bit CM OS Dynamic Random Access M em ory Module. It is com posed of two 1-Mb DRAM s in SOJ MSM514256B packages and one 256-Kb

SC2330

Abstract: SC2330B
Contextual Info: O K I Semiconductor MSC2330B-XXYS4/KS4 524,288-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2330B-xxYS4/KS4 is a fully decoded 524,288-word x 8-bit CMOS Dynamic Random Access Memory Module composed of four 1-Mb DRAMs in SOJ MSM514256B packages mounted with four

MSM514256

Abstract: BL-45 ZIP20-P-400
Contextual Info: O K I Semiconductor MSM5 14256 B/BL_ 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM514256B / BL is a 262,144-w ord x4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256B/BL achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 14256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM514256B/BL is a262,144-word x4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256B/BL achieves high integration, high-speed operation, and low-power

G1238

Abstract: sc2331
Contextual Info: O K I Semiconductor MSC2331B-XXYS3/KS3 262,144-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2331B-xxYS3/KS3 is a fully decoded 262,144-w ord x 9-bit CMOS Dynamic Random Access Memory Module. It is composed of two 1-Mb DRAMs in SOJ MSM514256B packages and one 256-Kb

BL70M

Abstract: SA73A
Contextual Info: O K I semiconductor MSM514256B/BL 262,144-W ord x 4-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 514256B/B L is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the M SM 514256B/BL is OKI's CM OS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B / BL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256B/BL achieves high integration, high-speed operation, and low-power

b72U2

Abstract: 20-PIN ZIP20-P-400 *m514256B
Contextual Info: O K I Semiconductor MSM5 14256 B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC2322B-XXYS20/DS20 524,288-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2322B-xxYS20/DS20 is a fully decoded 524,288-word x 40-bit CMOS Dynamic Random Access Memory Module composed of twenty 1-Mb DRAMs in SOJ MSM514256B packages mounted

MSC2328B-XXYS2

Abstract: MSM5
Contextual Info: O K I Semiconductor MSC2328B-xxYS2_ 262,144-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2328B-xxYS2 is a fully decoded 262,144-word x 8-bit CMOS Dynamic Random Access Mem­ ory Module composed of two 1-Mb DRAMs in SOJ MSM514256B packages mounted with two 0.2 |j.F

Contextual Info: O K I Semiconductor MSM6789A/6789L SBC Solid-State Recorder 1C GENERAL DESCRIPTION The M SM 6789A /6789L, an improved version of MSM6788, is a solid-state recorder developed using the Sub Band Coding SBC method. Just like MSM6788, the M SM 6789A/6789L has a stand-alone mode and a microcontroller interface