MSM511002B Search Results

Contextual Info: O K I Semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I semiconductor MSM511002B 1,048,576-Word x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

13005 TRANSISTOR

Abstract: transistor 13005 CIRCUIT 18-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Semiconductor MSM511002 B_ 1,048,576-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE DESCRIPTION The MSM511002B is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511002B is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I semiconductor MSM511002B 1,048,576-W ord x 1-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 511002B is a new generation dynamic RAM organized as 1,048,576 words x 1 bit. The technology used to fabricate the MSM511002B is OKI's CM OS silicon gate process technology. The