MSB05 Search Results

MSB05

Abstract: MSB10
Contextual Info: m c R o s E n i coRP MSB05 MSB1, MSB2, MSB4, MSB6, MSB8, MSB 10 Microsemi Corp. scan's DALE, A7. SANTA ANA, CA nsc blisabs OOOSQST TOT STE D For more inform ation ca 602 941-63Ô0 FEATURES • D U A L IN - L I N E S U B M IN IA T U R E P A C K A G E [D IP)

MSB056

Abstract: MDB051 MDB054 MDB056 MSB051 MSB054
Contextual Info: MSB051 thru MSB056 SINGLE PHASE 0 .5 AMP GLAS PASSIVATED BRIDGE RECTIRERS VOLTAGE RANGE 100 to 600 Volts CURRENT 0.5 Ampere m MINI-DFS FEATURES * Ideal for printed circuit board Q B _a * Reliable low cost construction utilizing molded plastic technique +0.15 3

MSB05M

Contextual Info: MSB05M GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIERS REVERSE VOLTAGE – 1000Volts FORWARD CURRENT – 0.5 Ampere GENERAL DESCRIPTION Suitable for AC-to-DC bridge full wave rectification for SMPS, LED lighting, adapter, battery charger, home appliances,

Contextual Info: SMB Series MSB01 RG174/U RG188/U RG316/U SMB MALE CRIMP MSB01S RG316/U SMB MALE CRIMP RG316/U SMB FEMALE CRIMP RG316/U SMB FEMALE CRIMP 32 RG174/U RG188/U RG316/U MSB05 RG174/U RG188/U RG316/U MSB06 RG174/U RG188/U RG316/U SMB FEMALE BULKHEAD CLAMP RG174/U RG188/U

BLY89C

Abstract: MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: 19-5543; Rev 0; 9/10 TION KIT EVALUA BLE AVAILA High-Side, Current-Sense Amplifiers with 12-Bit ADC and Op Amp/Comparator The MAX9611/MAX9612 are high-side current-sense amplifiers with an integrated 12-bit ADC and a gain block that can be configured either as an op amp or

314 optocoupler

Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Contextual Info: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with

A17200

Contextual Info: BLF145 HF power MOS transistor Rev. 04 — 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

wirelesscommunication

Abstract: MGP175 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf BLF245 iec 947 156-1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain

SOT123 Package

Abstract: 4312 020 36640 transistor Common Base configuration Q 371 Transistor SOT123 BLV20 BR 8 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

BLV20

Abstract: 4312 020 36640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f.

BLF244

Abstract: MGP160
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control

BLW50F

Abstract: PHILIPS 4312 amplifier power amplifier handbook ceramic capacitor philips 561 ferroxcube wideband hf choke
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial

ceramic capacitor 470 pf

Abstract: philips carbon film resistor philips transistor sot122 MCB117
Contextual Info: • T llQ Ö S h UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DDbETO b ‘H ö philips « P H IN BLU15/12

Contextual Info: Philips Semiconductors b b 5 3 ^ 3 1 0 Q2 T 211 7 fl 4 M A P X Product specification B L V 1 0 1 A /B L V 1 0 1 B U H F p o w e r tr a n s is to r s N AUER PHILIPS/DISCRETE FEATURES b'lE D QUICK REFERENCE DATA • High input and output impedances promote easy

msb2

Abstract: MSB05 MSB10 RHB marking MSB6
Contextual Info: I ttK ^ ïM MSB05 M SB1M SB2, MSB4„ MSB6, MSB8, MSB 10 Microsemi Corp. DIP BRIDGE RECTIFIERS FEATURES • • • • • • • • Dual In-Line subm iniature package DIP . M achine insertable. M olded epoxy package. Precise .1-inch lead spacing. Low cost.

d 331 transistor 1080

Abstract: bly87c MSB056
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

MAX9612AUB

Abstract: MAX9611 Hex Op Amp MAX9611AUB inrush current limiter 008X0
Contextual Info: 19-5543; Rev 3; 6/11 TION KIT EVALUA BLE AVAILA High-Side, Current-Sense Amplifiers with 12-Bit ADC and Op Amp/Comparator The MAX9611/MAX9612 are high-side current-sense amplifiers with an integrated 12-bit ADC and a gain block that can be configured either as an op amp or

CIM020P5

Abstract: MC521 mx322-254 mkds MX322 MSQ03005 CIM060P5 CIM030P5 MB362-381A MSB04005
Contextual Info: PHOENIX TYPE PHOENIX ORDER NO. BLOCKMASTER P/N MPT 0,5/2-2,54 MPT 0,5/3-2,54 MPT 0,5/4-2,54 MPT 0,5/5-2,54 MPT 0,5/6-2,54 MPT 0,5/7-2,54 MPT 0,5/8-2,54 MPT 0,5/9-2,54 MPT 0,5/10-2,54 MPT 0,5/11-2,54 MPT 0,5/12-2,54 17 25 65 6 17 25 66 9 17 25 67 2 17 25 68 5

MAX9611

Abstract: MAX9611AUB MSB05 MAX9612 MSB11 maxim 1889 D 1887
Contextual Info: 19-5543; Rev 1; 11/10 TION KIT EVALUA BLE AVAILA High-Side, Current-Sense Amplifiers with 12-Bit ADC and Op Amp/Comparator The MAX9611/MAX9612 are high-side current-sense amplifiers with an integrated 12-bit ADC and a gain block that can be configured either as an op amp or

A3120 Pin Configuration

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D065 BLF242 HF-VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Oct 13 Philips Semiconductors Product specification HF-VHF power MOS transistor BLF242 PIN CONFIGURATION FEATURES • High power gain

SL 100 NPN Transistor base emitter collector

Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz