MRW54001 Search Results

Contextual Info: MOTOROLA Order this document by MRW54001/D SEMICONDUCTOR TECHNICAL DATA MRW54001 . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW54001 MRW54601 The RF Line M icrowave Linear Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Linear Power Transistors MRW54001 MRW54601 . . . designed prim arily for large-signal output and driver am plifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, C om m on-E m itler Linear Power Amplifiers

Contextual Info: MOTOROLA Order this document by MRW54001/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistors MRW54001 MRW54601 . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers

MRW54001

Contextual Info: MOTOROLA Order this document by MRW54001/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistors MRW54001 . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers

MRW54001

Abstract: lg system ic
Contextual Info: MRW54001 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI MRW54001 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. FEATURES: • Omnigold Metalization System • Implanted ballast resistors • Common-Emitter

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

2.5 GHz RF power transistors with s-parameters

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers

42724

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers

RW54001

Abstract: Motorola 54101
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RW 54001 Series The RF Line Microwave Linear Power Transistors 10 TO 11 dB 1-4 GHz 0.5 WATT MICROWAVE LINEAR POWER TRANSISTORS . . d e s ig n e d p r im a r ily fo r la rg e -s ig n a l o u tp u t a n d d r iv e r a m p lifie r s ta g e s in th e 1 to 4