MN101E16M
Abstract: No abstract text available
Text: Vdd 17,30,89,100 11,14,19,39,63,91 MN101E16M OSC1 13 1 OSC2 12 CCR20.0MXC7 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=9/9pF +/-20% Oscillating circuit for evaluation
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MN101E16M
CCR20
MN101E16M
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mn101ef16k
Abstract: MN101EF16Z
Text: MN101E16 Series MN101E16K Type MN101E16M 256K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16Y MN101EF16K Mask ROM Internal ROM type MN101EF16Z FLASH 384K 256K 512K 12K 20K 16K 30K LQFP100-P-1414, QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16K
MN101E16M
MN101E16Y
MN101EF16K
MN101EF16Z
LQFP100-P-1414,
-P1818
-P1414
QFP100-P-1818B
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Untitled
Abstract: No abstract text available
Text: MN101E16 Series MN101E16K Type MN101E16M 256K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16Y MN101EF16K Mask ROM Internal ROM type MN101EF16Z FLASH 384K 256K 512K 12K 20K 16K 30K LQFP100-P-1414, QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16K
MN101E16M
MN101E16Y
MN101EF16K
MN101EF16Z
LQFP100-P-1414,
-P1818
-P1414
QFP100-P-1818B
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Untitled
Abstract: No abstract text available
Text: MN101E16K, MN101E16M Type ROM x× 8-bit MN101E16K (under planning) MN101E16M (under development) 256 K 384 K 12 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time Interrupts
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MN101E16K,
MN101E16M
MN101E16K
QFP100-P-1818B
LQFP100-P-1414
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MN101EF16k
Abstract: MN101E16K MN101EF16 MN101E16Y MN101E16M MN101EF16Z
Text: MN101E16 Series MN101E16K Type MN101E16M MN101E16Y MN101EF16K Mask ROM Internal ROM type 256K ROM byte MN101EF16Z FLASH 384K 256K 512K 12K 20K 16K 30K LQFP100-P-1414, QFP100-P-1818B LQFP100-P-1414, QFP100-P-1818B (Under development) QFP100-P-1818B QFP100-P-1818B
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MN101E16
MN101E16K
MN101E16M
MN101E16Y
MN101EF16K
MN101EF16Z
LQFP100-P-1414,
QFP100-P-1818B
MN101EF16k
MN101E16K
MN101EF16
MN101E16Y
MN101E16M
MN101EF16Z
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Untitled
Abstract: No abstract text available
Text: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16N Mask ROM Internal ROM type 256K FLASH 384K 512K 4K 12K 20K 30K QFP100-P-1818B QFP100-P-1818B QFP100-P-1818B (Under planning)
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MN101E16
MN101E16G
MN101E16K
MN101E16M
MN101EF16N
QFP100-P-1818B
QFP100-P-1818B
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MN101E16M
Abstract: MN101EF16N
Text: MN101E16 Series MN101E16G Type MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type MN101EF16N FLASH ROM byte 128K 256K 384K 256K 512K RAM (byte) 4K 12K 20K 30K QFP100-P-1818B (Under planning) QFP100-P-1818B (Under development) QFP100-P-1818B 16K QFP100-P-1818B
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MN101E16
QFP100-P-1818B
MN101E16G
MN101E16K
QFP100-P-1818B
MN101E16M
MN101EF16K
MN101EF16N
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MN101EF16K
Abstract: MN101E16G QFP100-P-1818B
Text: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type 256K MN101EF16N FLASH 384K 256K 512K 6K 12K 20K 16K 30K QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16G
MN101E16K
MN101E16M
MN101EF16K
MN101EF16N
QFP100-P-1818B
LQFP100-P-1414,
-P1414
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Untitled
Abstract: No abstract text available
Text: MN101E16 Series MN101E16K Type MN101E16M MN101E16Y MN101EF16K Mask ROM Internal ROM type 256K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101EF16Z FLASH 384K 256K 512K 12K 20K 16K 30K LQFP100-P-1414, QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16K
MN101E16M
MN101E16Y
MN101EF16K
MN101EF16Z
LQFP100-P-1414,
QFP100-P-1818B
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mn101e16k
Abstract: No abstract text available
Text: MN101E16K, MN101E16L, MN101E16M Type ROM x× 8-bit MN101E16K MN101E16L (under planning) MN101E16M (under development) 256 K 320 K 384 K 12 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free (under development)
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MN101E16K,
MN101E16L,
MN101E16M
MN101E16K
MN101E16L
QFP100-P-1818B
LQFP100-P-1414
TimBO0A/TXD0A/P00
SBI0A/RXD0A/P01
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Untitled
Abstract: No abstract text available
Text: MN101E16K, MN101E16M Type ROM x× 8-bit MN101E16K (under planning) MN101E16M 256 K 384 K 12 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time Interrupts Timer Counter QFP100-P-1818B *Lead-free
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MN101E16K,
MN101E16M
MN101E16K
MN101E16M
QFP100-P-1818B
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Untitled
Abstract: No abstract text available
Text: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16K Mask ROM Internal ROM type 256K MN101EF16N FLASH 384K 256K 512K 6K 12K 20K 16K 30K QFP100-P-1818B LQFP100-P-1414,
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MN101E16
MN101E16G
MN101E16K
MN101E16M
MN101EF16K
MN101EF16N
QFP100-P-1818B
LQFP100-P-1414,
-P1414
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MN101E16M
Abstract: No abstract text available
Text: Vdd 17,30,89,100 11,14,19,39,63,91 MN101E16M OSC1 13 1 OSC2 12 FCR4.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation
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MN101E16M
30/30pF
MN101E16M
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Untitled
Abstract: No abstract text available
Text: MN101E16 Series MN101E16G Type 128K ROM byte RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E16K MN101E16M MN101EF16N Mask ROM Internal ROM type 256K FLASH 384K 512K 4K 12K 20K 30K QFP100-P-1818B QFP100-P-1818B QFP100-P-1818B (Under planning)
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MN101E16
MN101E16G
MN101E16K
MN101E16M
MN101EF16N
QFP100-P-1818B
QFP100-P-1818B
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Untitled
Abstract: No abstract text available
Text: MN101E16K, MN101E16M Type ROM x× 8-bit MN101E16K (under planning) MN101E16M (under development) 256 K 384 K 12 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package Minimum Instruction Execution Time Interrupts
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MN101E16K,
MN101E16M
MN101E16K
QFP100-P-1818B
LQFP100-P-1414
P24/IRQ4
P23/IRQ3A
P22/IRQ2A
P21/IRQ1A
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Untitled
Abstract: No abstract text available
Text: MN101E16K, MN101E16L, MN101E16M Type ROM x× 8-bit MN101E16K MN101E16L (under planning) MN101E16M (under development) 256 K 320 K 384 K 12 K 14 K 20 K External memory can be expanded RAM (×× 8-bit) External memory can be expanded Package QFP100-P-1818B *Lead-free, LQFP100-P-1414 *Lead-free (under development)
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MN101E16K,
MN101E16L,
MN101E16M
MN101E16K
MN101E16L
QFP100-P-1818B
LQFP100-P-1414
Tim00
SBI0A/RXD0A/P01
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MN101CF78
Abstract: MN101EF16
Text: AM1 MN101 Series AM1 (MN101) Series The AM1 Series of 8-bit microcomputers is the realization of developments in C programming. Because of the 8-bit architecture, which allows half-byte instruction sets and offers other advantages, assembler ROM code size can be reduced.
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MN101)
16-bit
P33/COM3
NRST/P27
TM7IOB/LED1/P51
TM2IOB/LED2/P52
TM8IOB/LED3/P53
RMOUTB/TM0IOB/LED0/P50
VLC3/P92
MN101CF78
MN101EF16
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MN103G57G
Abstract: MN103SF mn101cf95 MN101CF95G MN101CF91D mn103002
Text: ¢ AM1 MN101 8-bit Single-chip Microcomputers Series Specifications Type ADC Built-in Type ADC• DAC Built-in Type Part Number ROM RAM (x 8-bit) (× 8-bit) Package Built-in Built-in I/O Speed Operating Interrupt Timer/ EPROM Flash Pins (µs) voltage(V) sources counters
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MN101)
MN101C273
MN101C425
MN101C427
MN101C457
MN101C539
MN101C309
MN101C30A
MN101C28A
MN101C28C
MN103G57G
MN103SF
mn101cf95
MN101CF95G
MN101CF91D
mn103002
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MN101E31G
Abstract: DATA VISION LCD P84 DATA VISION LCD P72 DATA VISION LCD P70 MN101E29 MN101EF29G MN101C78 DATA VISION LCD P60 MN101 assembler MN101c58a
Text: AM1 MN101 Series AM1 (MN101) Series The AM1 Series of 8-bit microcomputers is the realization of developments in C programming. Because of the 8-bit architecture, which allows half-byte instruction sets and offers other advantages, assembler ROM code size can be
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MN101)
32-bit
16-bit
16-bi4,
MN101E33K
VDD18
VDD33
QFP100-P-1818B
MAD00065AEM
MN101E31G
DATA VISION LCD P84
DATA VISION LCD P72
DATA VISION LCD P70
MN101E29
MN101EF29G
MN101C78
DATA VISION LCD P60
MN101 assembler
MN101c58a
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