MN101CF8 Search Results
MN101CF8 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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MN101CF84D |
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64K ROM, 2K RAM FLASH | Original | |||
MN101CF88G |
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128K ROM, 10K RAM FLASH | Original |
MN101CF8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MN101CF87GBL CCR20.0MXC7 Tc p 25 Cdeg] a. U1H/U1L [U1 Q 0 Tupical — ~ * Unrst UIH sUIL eb. U2H/U2L CU] U2H b- U2L sc. Fosc .3 .1 -.1 -.3 -.5 400 300 200 100 60 55 50 45 40 EX] d, Trise i, Duty CuSl EX] Udd f. Ustart CU] m Typical = I.84 Worst = 1.86 g. Uhold |
OCR Scan |
MN101CF87GBL CCR20 200-1-1-1-r- MNI0ICF87GBL | |
Contextual Info: MN101CF87GBL - I FCR8.0MC5 Fig.a~e Udd= 5 EU] 0-B Typical V -•i ' , , mi, 'ifb. U2H/U2L CU] U2H V -tf, -i ' , A - 1 -0- d a. U1H/U1L CU1 mim V V bA4 V ,U?li "'1- c. Fosc 5 EX] . - -Vu 1 - r ^ r - _ _ 3 -•ff5 -.3 J I I I d, Trise |
OCR Scan |
MN101CF87GBL 200cal MNI0ICF87GBL | |
Contextual Info: Vdd 9,35,36 8,12,15 MN101CF88GXA OSC1 11 1 OSC2 10 FCR8.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=20/20pF +/-20% Oscillating circuit for evaluation |
Original |
MN101CF88GXA 20/20pF | |
FCR16Contextual Info: Vdd 9,35,36 8,12,15 MN101CF88GXA OSC1 11 OSC2 10 FCR16.0M2G 1 2 V1H/V1L V2H/V2L CL1 CL2 5pF 5pF Oscillating circuit for evaluation |
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MN101CF88GXA FCR16 | |
Contextual Info: MN101C88 Series MN101C88D Type ROM byte 64K RAM (byte) 2K Package (Lead-free) Minimum Instruction Execution Time MN101C88F MN101C88G MN101CF88G Mask ROM Internal ROM type FLASH 96K 128K 4K 10K QFP100-P-1818B QFP100-P-1818B QFP100-P-1818B (Under planning) |
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MN101C88 MN101C88D MN101C88F MN101C88G MN101CF88G -P1818 QFP100-P-1818B QFP100-P-1818B DGT10, DGT11, | |
Contextual Info: MN101C87 Series MN101C87A Type MN101C87D Mask ROM Internal ROM type MN101CF87G FLASH ROM byte 32K 64K 128K RAM (byte) 1.5K 2K 4K Package (Lead-free) Minimum Instruction Execution Time LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz) |
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MN101C87 MN101C87A MN101C87D MN101CF87G LQFP064-P-1414 DGT11 DGT12 DGT13 DGT14 DGT15 | |
LQFP064-P-1414
Abstract: MN101C84A MN101CF84D SD07
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MN101C84 MN101C84A MN101CF84D LQFP064-P-1414 LQFP064-P-1414 MN101C84A MN101CF84D SD07 | |
MN101C88D
Abstract: MN101C88F MN101C88G MN101CF88G QFP100-P-1818B MN101CF88
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MN101C88D, MN101C88F, MN101C88G MN101C88D MN101C88F MN101CF88G QFP100-P-1818B MN101C88D MN101C88F MN101C88G MN101CF88G QFP100-P-1818B MN101CF88 | |
LQFP064-P-1414
Abstract: MN101C84A MN101CF84D
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MN101C84A MN101CF84D LQFP064-P-1414 LQFP064-P-1414 MN101C84A MN101CF84D | |
Contextual Info: MN101CF8 8 GXA - I FCR8.0MC5 Udd= 5 CU] Typical U2H ^ 'Ik i U2L c. Fosc 5 cm . 5o5 , ~i£ V . . d i cb^ ^-r b. U2H/U^L 5J • .Ulli V V 1 55Ln ■ i b6J < U1H/U1L CU1 53 UIH b . 0- B a. Fig.a"e Y 71?. . ~i? . . 71?. EX] 3 - - - fj 1 :-St i? -.3 |
OCR Scan |
MN101CF88GXA | |
Contextual Info: MN101C84 Series MN101C84A MN101CF84D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)* |
Original |
MN101C84 MN101C84A MN101CF84D LQFP064-P-1414 SEG28, SEG29, SEG30, SEG31, MAD00049FEM | |
Contextual Info: MN101C84 Series MN101C84A MN101CF84D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)* |
Original |
MN101C84 MN101C84A MN101CF84D LQFP064-P-1414 | |
FCR16Contextual Info: Vdd 8,29,30 11,14,15 MN101CF87GBL OSC1 10 OSC2 9 FCR16.0M2G 1 2 V1H/V1L V2H/V2L CL1 CL2 5pF 5pF Oscillating circuit for evaluation |
Original |
MN101CF87GBL FCR16 | |
Contextual Info: Vdd 8,29,30 11,14,15 MN101CF87GBL OSC1 10 1 OSC2 9 FCR4.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation |
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MN101CF87GBL 30/30pF | |
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Contextual Info: Vdd 9,35,36 8,12,15 MN101CF88GXA OSC1 11 1 OSC2 10 CCR20.0MXC7 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=9/9pF +/-20% Oscillating circuit for evaluation |
Original |
MN101CF88GXA CCR20 | |
MN101C87A
Abstract: DGT12 LQFP064-P-1414 MN101C87D
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MN101C87A, MN101C87D MN101C87A MN101CF87G LQFP064-P-1414 MN101C87A DGT12 LQFP064-P-1414 MN101C87D | |
MN101C88D
Abstract: MN101C88F MN101C88G MN101CF88G QFP100-P-1818B
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MN101C88 MN101C88D MN101C88F MN101C88G MN101CF88G QFP100-P-1818B MN101C88D MN101C88F MN101C88G MN101CF88G QFP100-P-1818B | |
Contextual Info: MN101C87 Series MN101C87A Type MN101C87D Mask ROM Internal ROM type MN101CF87G FLASH ROM byte 32K 64K 128K RAM (byte) 1.5K 2K 4K Package (Lead-free) Minimum Instruction Execution Time LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz) |
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MN101C87 MN101C87A MN101C87D MN101CF87G LQFP064-P-1414 SEG10 SEG11 SEG12 SEG13 SEG14 | |
Contextual Info: MN101C88 Series MN101C88D Type ROM byte 64K RAM (byte) 2K Package (Lead-free) Minimum Instruction Execution Time MN101C88F MN101C88G MN101CF88G Mask ROM Internal ROM type FLASH 96K 128K 4K 10K QFP100-P-1818B QFP100-P-1818B QFP100-P-1818B (Under planning) |
Original |
MN101C88 MN101C88D MN101C88F MN101C88G MN101CF88G QFP100-P-1818B SEG29 SEG30 | |
Contextual Info: MN101CF87GBL - I FCRI6.0M2G Udd= 5 EU] Fig.a~d Ta= 25 Cdeg] 0 Tupical Q a. U1H/U1L 7 [U1 U|H V ) _l I J I 'iI UIL I b. U2H/U2L c. Fosc U?L I EX] 1 I I 4 i CU] 5 3 5 - 4,6- 4^6 I iJ I I I I I lj| _J I L I I I I i I I i I I I i I I L_ I I I I |
OCR Scan |
MN101CF87GBL 49tf9 MNI0ICF87GBL | |
Contextual Info: MN101C84 Series MN101C84A MN101CF84D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)* |
Original |
MN101C84 MN101C84A MN101CF84D LQFP064-P-1414 conP53 SEG11 SEG10 SEG12 SEG13 SEG14 | |
MN101CF84DContextual Info: 2-10,13,17 19-22,24-64 1,16,18,23 Vdd MN101CF84D ODC1 12 OSC2 11 Rd:470 FCR8.0MC5 1 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=20/20pF +/-20% Oscillating circuit for evaluation |
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MN101CF84D 20/20pF MN101CF84D | |
Contextual Info: MN101C88 Series MN101C88D Type ROM byte 64K RAM (byte) 2K Package (Lead-free) Minimum Instruction Execution Time MN101C88F MN101C88G MN101CF88G Mask ROM Internal ROM type FLASH 96K 128K 4K 10K QFP100-P-1818B QFP100-P-1818B QFP100-P-1818B (Under planning) |
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MN101C88 MN101C88D MN101C88F MN101C88G MN101CF88G -P1818 QFP100-P-1818B QFP100-P-1818B | |
Contextual Info: MN101C87 Series MN101C87A Type MN101C87D Mask ROM Internal ROM type MN101CF87G FLASH ROM byte 32K 64K 128K RAM (byte) 1.5K 2K 4K Package (Lead-free) Minimum Instruction Execution Time LQFP064-P-1414 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.24 µs (at 2.7 V to 5.5 V, 8.4 MHz) |
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MN101C87 MN101C87A MN101C87D MN101CF87G LQFP064-P-1414 |