MK48T12 Search Results

48T02

Contextual Info: r Z Z SGS-THOMSON MK48T02 MK48T12 MiOœtittJig «! CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIM E CLOCK, CRYSTAL, POWER-FAIL CO NTRO L C IRCUIT AND BATTERY. ■ BYTEW IDE RAM-LIKE CLO CK ACCESS. ■ BCD C O D E D YEAR , M O NTH, DAY, DATE,

hst 1025

Abstract: MK48T02 PHDIP24 6116 ram 2k 48t02 H99XXYYZZ 1032 TCEA MK48T12 "binary to bcd"
Contextual Info: 52E D • 7 ‘1ECJB37 DD3flS0M 74T ■ S 6 T H Z, MK48T02 MK48T12 SGS-THOMSON ilLHOT *! S G S-THOMSON CMOS 2K x 8 TIMEKEEPER SRAM ■ INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS.

MK48T128

Abstract: IM1646 DS1646 IM1646-12 MK48T12 BCD 2000 power volts diagram
Contextual Info: INNOVATIVE IM1646 Nonvolatile Timekeeping RAM Features: Form, fit and function compatible with the MK48T128 and DS1646 Timekeeping RAM. Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source. Standard JEDEC bytewide 128K X 8 static RAM

VR00084

Contextual Info: FZ 7 SCS-THOMSON MK48T02 MK48T12 [*[i?m iOT «S CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES AND SECONDS.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

d2764c

Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706
Contextual Info: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

MKB6116

Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
Contextual Info: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250

MK48T08

Abstract: MK48T18 AN934 MK48T m48t35 M48T02 M48T12 M48T86 MK48T02 MK48T12
Contextual Info: AN934 APPLICATION NOTE TIMEKEEPER Calibration The term “quartz accurate” has become a familiar phrase used to describe the accuracy of many time keeping functions. Quartz oscillators provide an accuracy far superior to other conventional oscillator designs, but they are not perfect. Quartz crystals are sensitive to temperature variations. Figure 1 shows the

MK48TO2

Contextual Info: 7^2^237 0027^43 1 2- SGS-THOMSON MK48T02/12(B -12/15/20/25 iy S G S-TH0MS0N 3DE » 2K X 8 ZEROPOWEFT/TIMEKEEPER RAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY BYTEWIDE™ RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,

MK48T02

Contextual Info: f Z 7 S C S -T H O M S O N Ä 7# M K 48T02 M K48T12 CMOS 2K X 8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY. ■ BYTEWIDE RAM-LIKE CLOCK ACCESS. ■ BCD CODED YEAR, MONTH, DAY, DATE,

TEA7052DP

Abstract: ls285ab TEA7531DP 7532DP M3541B LS285AB1 LS588N TEA7063DP LS256B pnp for 2n3019
Contextual Info: TELEPHONE SET RECOMMENDED PRODUCTS FROM SGS-THOMSON SPEECH CIRCUITS Type Number L3280AB LS256B PROTECTION Description Very low voltage telephone speech circuit Telephone speech circuit with multifrequency interface Telephone speech circuit Programmable telephone speech circuit

MK48T08

Abstract: MK48T18 AN934 m48t08 m48t35 MK48T MK48T12 M48T02 M48T12 M48T86
Contextual Info: AN934 APPLICATION NOTE TIMEKEEPER Calibration The term “quartz accurate” has become a familiar phrase used to describe the accuracy of many time keeping functions. Quartz oscillators provide an accuracy far superior to other conventional oscillator designs, but they are not perfect. Quartz crystals are sensitive to temperature variations. Figure 1 shows the

Contextual Info: AN1012 Application note Predicting the battery life and data retention period of NVRAMs and serial RTCs Introduction Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their

Contextual Info: •THOMSON Û 7 D D I 7 =1 2 ^ 3 7 DDlGSfll H =W = ; ^ :- Z É R g l? Q W Ë > ^ { M Ë ^ e e É liJ [B A M FEATURES □ Integrated Ultra Low Power SRAM, Real Time Clock, Crystal, Power-fail Control Circuit and Battery 1 c □ 24 Vcc 2 C 3 23 *8 A5 3 C □ 22

48t02

Abstract: mostek shift register 6116 EEPROM 28 PINS
Contextual Info: 2K 8 ZERO PO W ER /T IM E K E E P E R RAM MEMORY CO M PO NENTS FEATURES □ Integrated Ultra Low Power SRAM, Real Time Clock, Crystal, Power-tall Control Circuit and Battery 1 c □ 24 A 6 2 C □ 23 *5 3 C □ 22 □ BCD Coded Year, Month, Day, Date, Hours, Minutes

MK48TO2

Abstract: MK48TO2-12 MK48T12
Contextual Info: { 7 Z S C S - T H O M S O M K48T02/12 B -12/15/20/25 N # „ RiflDeOOHILKgTMROOgi 2K x 8 ZEROPQWEfy*/TIMEKEEPER RAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, CRYSTAL, POWER-FAIL CONTROL CIRCUIT AND BATTERY ■ BYTEWIDE” RAM-LIKE CLOCK ACCESS

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

MB81C68

Abstract: TMS27256 nmc27c640 free transistor equivalent book 2sc Zeropower ram MK48Z ET27160 200 watt Regulated dc Power Supply Schematic Diag itt capacitor ady10 m2764a-2fl
Contextual Info: MEMORY PRODUCTS DATABOOK 1st EDITION JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON' PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEM WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF SGS-THOMSON

K6X8008T2B-UF55

Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

14270x

Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

MK48TO2-12

Abstract: SRAM 6116 kick circuit drain mk48to MK48T12 MK48TO2 MK48T02 mostek 80 byte shift register 6116 sram
Contextual Info: IffiEEHSEll COMPONENTS MK48T02/12 B -12/15/20/25 yr~i 2K X 8 Z E R O P O W E R TIM E K E E P E R RAM MEMORY COMPONENTS FEATURES □ Integrated U ltra Low Power SR AM , Real Tim e Clock, Crystal, Power-fail C ontrol C ircu it and B attery A7 1 c 3 24 Vcc A.

BR1632 safety

Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

br1632 br1225

Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

MK48T08

Abstract: mk48t18 MK48Z08 MKI48Z12 MK48Z09 MK48T12
Contextual Info: / = 7 SGS-THOMSON ^7# APPLICATION NOTE [fôôD g^ [lL[l©Tr[S(ô RÎ]0©i ENSURING DATA INTEGRITY IN ZEROPOWER AND TIMEKEEPER RAMs The ZEROPOWER and TIMEKEEPER™ product families offer a unique non-volatile RAM solution. ZEROPOWER products consist of a single chip