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STMicroelectronics MJ3001 TRANS NPN DARL 80V 10A TO3
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DigiKey	MJ3001	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Intel Corporation PLMJ3000-44 PROG ADAPTER FOR 3000A
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DigiKey	PLMJ3000-44	Box			1	1 $500 10 $500 100 $500 1000 $500 10000 $500	Buy Now
Skyworks Solutions Inc 550MJ300M000DG XTAL OSC VCXO 300.0000MHZ LVPECL
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DigiKey	550MJ300M000DG				50	1 - 10 - 100 $43.2912 1000 $43.2912 10000 $43.2912	Buy Now
Mouser Electronics	550MJ300M000DG					1 - 10 - 100 $42.39 1000 $42.39 10000 $42.39	Get Quote
Richardson RFPD	550MJ300M000DG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Skyworks Solutions Inc 550MJ300M000DGR XTAL OSC VCXO 300.0000MHZ LVPECL
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DigiKey	550MJ300M000DGR	Reel			250	1 - 10 - 100 - 1000 $41.68776 10000 $41.68776	Buy Now
Mouser Electronics	550MJ300M000DGR					1 - 10 - 100 - 1000 $41.16 10000 $41.16	Get Quote
Richardson RFPD	550MJ300M000DGR				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Sullins Connector Solutions SMJ300-T88N-DS-01 CONN MOD JACK 8P8C VERT SHIELDED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMJ300-T88N-DS-01	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MJ300 Datasheets (59)

Part	Manufacturer	Description	Datasheet Type	PDF
MJ300	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
MJ3000	Central Semiconductor	Power Transistors	Original	PDF
MJ3000	Comset Semiconductors	Silicon Epitaxial Base Darlington - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150	Original	PDF
MJ3000	Motorola	10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150	Original	PDF
MJ3000	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=1kmin / fT(Hz)=1M / Pwr(W)=150	Original	PDF
MJ3000	Central Semiconductor	POWER DARLINGTON TRANSISTORS (METAL)	Scan	PDF
MJ3000	Crimson Semiconductor	EPITAXIAL BASE Transistor	Scan	PDF
MJ3000	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
MJ3000	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
MJ3000	Motorola	The European Selection Data Book 1976	Scan	PDF
MJ3000	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJ3000	Motorola	Semiconductor Data Library Volume 3 1974	Scan	PDF
MJ3000	Motorola	European Master Selection Guide 1986	Scan	PDF
MJ3000	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

MJ3000	Unknown	Transistor Replacements	Scan	PDF
MJ3000	Unknown	Transistor Replacements	Scan	PDF
MJ3000	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
MJ3000	Unknown	Transistor Replacements	Scan	PDF
MJ3000	Unknown	Cross Reference Datasheet	Scan	PDF
MJ3000	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

MJ300 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJ3000 Abstract: No abstract text available Text: MJ3000 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	MJ3000 O204AA) 31-Jul-02 MJ3000
MJ3001 Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001 Text: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.	Original	PDF	MJ2500 MJ2501 MJ3000 MJ3001 MJ2500, MJ2500 MJ3000 transistor mj3001 MJ3001 equivalent MJ3000/MJ3001
mj3001 Abstract: mj2501 MJ3000 AIN60 Text: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are	Original	PDF	MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ3000 AIN60
h 033 Abstract: MJ300-02A LB-030 Text: Mounting Pad Packing Magazine Name MJ300-02A LB-030 26 pin SOJ 300 mil 14 1 13 F E G U J C 26 D B I H P T Q K M N M NOTE ITEM Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. B MILLIMETERS	Original	PDF	MJ300-02A LB-030 S26LA-300A-1 SC-632-A* h 033 MJ300-02A LB-030
h 033 Abstract: 0-12 MJ300-02A D14C Text: Mounting Pad Packing Magazine Name MJ300-02A LB-030 26 pin SOJ 300 mil 14 1 13 C 26 F D B I H G U J E M N T P Q K M NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS	Original	PDF	MJ300-02A LB-030 P26LA-50A-2 SC-632-A* h 033 0-12 MJ300-02A D14C
Untitled Abstract: No abstract text available Text: MJ3001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k	Original	PDF	MJ3001
Untitled Abstract: No abstract text available Text: MJ300A2F55 Transistors Darlington Independent Power Module Circuits Per Package1 Isolated Case Y/N Yes V(BR)CEO (V)550ö V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.80 @I(C) (A) (Test Condition)300	Original	PDF	MJ300A2F55 Code5-10 NumberTR00500010
mj3001 Abstract: No abstract text available Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u	Original	PDF	MJ2501 MJ3001 MJ3001. mj3001
MJ3001 Abstract: transistor mj3001 mj2501 MJ3001 equivalent SGS-Thomson Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power	Original	PDF	MJ2501 MJ3001 MJ2501 MJ3001. MJ3001 transistor mj3001 MJ3001 equivalent SGS-Thomson
MJ300-02A Abstract: No abstract text available Text: 5.7 UNIT : mm 10.4 MJ300-02A, LB-030 length : 461±2.0 thickness : 0.6 +0.3 −0.2 tolerance : ±0.4 material : plastic with antistatic finish Applied Package 26-pin Plastic SOJ (300 mil) Quantity (pcs) MAX. 25	Original	PDF	MJ300-02A, LB-030 26-pin MJ300-02A
transistor mj3001 Abstract: MJ2501 MJ3001 Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES • ■ APPLICATION AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL POWER SWITCHING	Original	PDF	MJ2501 MJ3001 MJ2501 MJ3001. transistor mj3001 MJ3001
transistor MJ2501 Abstract: transistor mj3001 MJ2501 MJ3001 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 Min @ IC = -5A ·Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min) ·Complement to type MJ3001	Original	PDF	MJ3001 -100mA; -20mA -50mA transistor MJ2501 transistor mj3001 MJ2501 MJ3001
MJ3001 Abstract: MJ2501 Text: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power	Original	PDF	MJ2501 MJ3001 MJ2501 MJ3001. MJ3001
MJ3001 Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w Text: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.	Original	PDF	MJ2501 MJ3001 MJ2501 MJ3001 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w

Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)	OCR Scan	PDF	5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015
Untitled Abstract: No abstract text available Text: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL	OCR Scan	PDF	MJ900 MJ901 MJ2500 MJ2501 MJ2955 MJ3000 MJ3001 MJ3201 HJ3202 MJ3238
motorola MJ3000 Abstract: transistor MJ2501 MJ3000 circuit mj2501 mj3000 MJ3001 transistor mj3001 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ‘"W M f a y f lf t w a n g o g s M aKM SA •M -H H ttM A ) Medium-Power Complementary Silicon Transistors PNP MJ2500 MJ2501* NPN MJ3000 MJ3001* . . . for use as output devices in complementary general purpose amplifier applica	OCR Scan	PDF	MJ2500 MJ2501* MJ3000 MJ3001* MJ3000 MJ2501 motorola MJ3000 transistor MJ2501 MJ3000 circuit MJ3001 transistor mj3001
Untitled Abstract: No abstract text available Text: rz 7 SCS-THOM SON MJ2501 i*! i[LI ¥[M0 gS MJ3001 COMPLEMENTARY SIUCOnTto W ^ TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3	OCR Scan	PDF	MJ2501 MJ3001 MJ2501 MJ3001.
transistor mj3001 Abstract: j3000 MJ3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501 MJ3000 Text: MJ2500, MJ2501, MJ3000, MJ3001 continued E L E C T R IC A L C H A R A C T E R IS T IC S (Tc = 2S°C unless otherwise noted)_ _ _ \| Characteristic \| Symbol \| M in \| M ix I O F F C H A R A C T E R IS T IC S	OCR Scan	PDF	MJ2500, MJ2501, MJ3000, MJ3001 J3000 J2501. MJ3001 J2500, MJ3000 transistor mj3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501
Untitled Abstract: No abstract text available Text: SGS-THOMSON MJ2501 MJ3001 RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3	OCR Scan	PDF	MJ2501 MJ3001 MJ2501 MJ3001. P003F
MJ300 Abstract: mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A Text: 6367254 MOTOROLA SC MOTOROLA Tb XSTRS/R F 9 6D 8 1 5 1 5 D 7 '3 3 ~ 3 £ Order this data sheet by MJ300AV100/D DE \| ti317ES4 ODfllSlS 5 SEMICONDUCTOR TECHNICAL DATA MJ300 AV 100 NPN S ilic o n P o w e r T ra n s is to r M odule Energy M anagem ent Series	OCR Scan	PDF	MJ300AV100/D 317ES4 MJ300 MK145BP, MJ300AV100 mj300av100 equivalent of transistor D 2331 diode l 0607 ip rating 4221 motorola transistor diode l 0607 max4283 SC3662 MJ300A
transistor mj3001 Abstract: TRANSISTOR 2SC 635 MJ3000 MJ3000 circuit MJ2501 MJ3001 J3000 j-2500 MJ2500 AN-415 Text: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose	OCR Scan	PDF	MJ2500, MJ2501 MJ3000, MJ3001 MJ2500 MJ3000 -MJ2501 transistor mj3001 TRANSISTOR 2SC 635 MJ3000 circuit J3000 j-2500 AN-415
MOTOROLA mj300av120 Abstract: MJ300AV120 FLU1-60 max4283 equivalent of transistor D 2331 4221 motorola transistor Text: 63.67254 M O T O R O L A SC XSTRS/R F lyiQYOROLA ST 89D 80000 D E \| b3ki7254 DDflDODO Order this data sheet by MJ300AV120/D D \| • SEMICONDUCTOR TECHNICAL DATA MJ300AV120 NPN Silico n Pow er Transistor Module Energy Management Series DU AL TR I-STA G E	OCR Scan	PDF	MJ300AV120/D b3ki7254 MJ300AV120 MK145BP, MOTOROLA mj300av120 MJ300AV120 FLU1-60 max4283 equivalent of transistor D 2331 4221 motorola transistor
MJ3001 Abstract: mj3000 Text: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are	OCR Scan	PDF	MJ2500/MJ2501 MJ3000/MJ3001 MJ2501 MJ3001 MJ2500, MJ2501 MJ3000 mj3000

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STMicroelectronics MJ3001

Intel Corporation PLMJ3000-44

Skyworks Solutions Inc 550MJ300M000DG

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Sullins Connector Solutions SMJ300-T88N-DS-01

MJ300 Datasheets (59)

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MJ3001

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MJ300

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