MGFS36E2325 Search Results
MGFS36E2325 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
|---|---|---|---|---|---|---|
| MGFS36E2325 |
|
2.3-2.5GHz HBT HYBRID IC | Original |
MGFS36E2325 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
mitsubishi vcb
Abstract: MGFS36E2325 16e-2005
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Original |
MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. January-2008 mitsubishi vcb 16e-2005 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • • |
Original |
MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 -30degC 25degC 60degC | |
mitsubishi Lot No
Abstract: mitsubishi vcb
|
Original |
MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. November-2007 mitsubishi Lot No mitsubishi vcb | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • • |
Original |
MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. December-2007 | |
|
Contextual Info: MITSUBISHI SEMICONDUCTOR MGFS36E2325 2.3-2.5GHz HBT HYBRID IC Specifications are subject to change without notice. Outline Drawing DESCRIPTION 4.5 1.0 MGFS36E2325 is GaAs RF amplifier designed for WiMAX CPE. 36E 2325 Lot No. FEATURES • • • • • |
Original |
MGFS36E2325 MGFS36E2325 27dBm 50ohms IEEE802 16e-2005 350degC. September-2007 |