MG400J Search Results

Contextual Info: TOSHIBA MG400J1US51 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT M G 4 0 0 J 1 US51 HIGH P O W ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • H ig h In p u t Impedance • Includes a Complete H a lf B ridge in One

Contextual Info: T O SH IB A MG400J2YS50 MG400J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in

MG400J1US41

Abstract: MG400J1US42 VTV-300
Contextual Info: TOSHIBA GTR MODULE SEMICONDUCTOR TO SH IB A TECHNICAL MG400J 1 U S 4 1 / M G 4 0 0 J 1 US42 DATA SILICON N CHANNEL IGBT M G400J1U S41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H igh In p u t Im pedance • H igh Speed : tf= 0.35/vs (Max.)

MG400J2YS61A

Abstract: tc 2608 IC tc 2608
Contextual Info: MG400J2YS61A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 400 Amperes/600 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA

mg400j1us1

Abstract: 47N IGBT LF400A LF400
Contextual Info: GTR MODULE SILICON N CHANNEL IGBT MG400J1US1 HI GH P OWER SW I T C H I N G A PP L IC ATIONS. riOTOR C O N T R O L AP PL IC ATIONS. . High Input Impedance . High Speed : tf=0.35ys Max. trr=0. 25fJs(Max.) . Low Saturation Voltage : VCE(sat)=4.0V(Hax.) . Enhancement-Mode

Contextual Info: MG400J2YS50 H IGH P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P PL IC A T IO N S. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode H ighspeed : tf=0.30,«s Max. (Ic = 400A)

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

Contextual Info: MG400J1US51 HIGH P O W E R SW ITC H IN G A PPLICA TIO N S. M O T O R C O N T R O L A PPLICATIO N S. • » • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0.30/is Max. (Ic = 400A)

MG400J1US51

Contextual Info: MG400J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG400J1US51 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

MG400J2YS50

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG400J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 0.30µs Max. (IC = 400A)

MG400J2YS61A

Contextual Info: MG400J2YS61A TOSHIBA IGBT Module Silicon N Channel IGBT MG400J2YS61A 600V/400A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: MG400J2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400J2YS60A 600V/400A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: TOSHIBA MG400J2YS50 Mfn/innnY^n TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package.

MG400J2

Abstract: silec MG400J2YS50
Contextual Info: TOSHIBA MG400J2YS50 MG400 J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 1 0 8±0.8 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package.

J1US51

Contextual Info: MG400J1US51 T O S H IB A M G 4 0 0 J 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: TO SH IBA MG400J2YS50 TOSHIBA GTR M O D ULE SILICON N CHANNEL IGBT MG400J2 YS50 HIGH P O W E R SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. H igh In p u t Impedance Includes a Complete H a lf Bridge in One Package.

Contextual Info: T O SH IB A MG400J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG400J2YS50 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in

rkm transistor

Abstract: MG400J1US2 rkm 27 transistor MG400J1US1 rkm 15 transistor rkm 35 transistor MG400JIUS1 RKM 05 125U rkm 20
Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA CTR MODULE MG400J1US1/MG400J1US2 TECHNICAL DATA SILICON N CHANNEL iCIV; HIG H P O W ER S W I T C H I N G A P P L I C A T I O N S . MOTOR CONTROL APPLICATIONS. . High Inpue Impedance . High Speed : L f= 0 . 35/is M a x . I. rr 0. 2 5 /j s ( M a x .)

MG400J2YS60A

Abstract: 9V12V
Contextual Info: MG400J2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400J2YS60A 600V/400A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: TOSHIBA MG400J1US51 MG4 QQJ 1 US5 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package.

00J1

Abstract: MG400J1US51 S300 3111R FR-650 2109A
Contextual Info: MG400J1US51 TOSHIBA M G 4 0 0 J 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

MG400J1US51

Contextual Info: MG400J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG400J1US51 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

inverter circuit using IGBT TOSHIBA module

Abstract: MG400J2YS60A
Contextual Info: MG400J2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG400J2YS60A 600V/400A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)

Contextual Info: TOSHIBA MG400J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 400J1 US51 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package.