MG100J1ZS40 Search Results

MG100J1ZS40 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG100J1ZS40		Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications		Original	PDF
MG100J1ZS40		Toshiba	TRANS IGBT MODULE N-CH 600V 100A 3(2-94D2A)		Original	PDF
MG100J1ZS40		Toshiba	N channel IGBT		Original	PDF
MG100J1ZS40		Toshiba	GTR Module Silicon N Channel IGBT		Scan	PDF

MG100J1ZS40 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MG100J1ZS40 Abstract: No abstract text available Text: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications l High input impedance l High spee : tf = 0.35µs max trr = 0.15µs (max) l Low saturation voltage : VCE (sat) = 3.5V (max)	Original	MG100J1ZS40 2-94D2A MG100J1ZS40	PDF
diode 083 Abstract: MG100J1ZS40 Text: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High spee : tf = 0.35µs max trr = 0.15µs (max) Low saturation voltage : VCE (sat) = 3.5V (max)	Original	MG100J1ZS40 2-94D2A diode 083 MG100J1ZS40	PDF
MG100J1ZS40 Abstract: No abstract text available Text: MG100J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High spee : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max)	Original	MG100J1ZS40 2-94D2A MG100J1ZS40	PDF
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
Untitled Abstract: No abstract text available Text: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)	OCR Scan	MG100J1ZS40	PDF
Untitled Abstract: No abstract text available Text: MG100J1ZS40 TOSHIBA MG100J1ZS40 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.) Low Saturation Voltage	OCR Scan	MG100J1ZS40 2-94D2A 100J1ZS40	PDF
4A05 diode Abstract: diode 4a05 Toshiba V300 ZS40 igbt toshiba mg MG100J1ZS40 V300 4a05 100/diode 4a05 Text: MG100J1ZS40 TOSHIBA MG 1 0 0 J 1 Z S 4 0 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage	OCR Scan	MG100J1ZS40 2-94D2A 4A05 diode diode 4a05 Toshiba V300 ZS40 igbt toshiba mg MG100J1ZS40 V300 4a05 100/diode 4a05	PDF
Untitled Abstract: No abstract text available Text: MG100J1ZS40 TOSHIBA TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT 1 0 0 J 1 Z S 40 M G Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.)	OCR Scan	MG100J1ZS40 2-94D2A 100J1ZS40	PDF
Untitled Abstract: No abstract text available Text: MG100J1ZS40 HIGH POW ER SW ITCHIN G APPLICATIONS. M O T O R CON TROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.35/is Max. trr = 0.15//s(M ax.) Low Saturation Voltage : v C E (sat) =3.5V (Max.) Enhancement-M ode The Electrodes are Isolated from Case.	OCR Scan	MG100J1ZS40 35/is 15//s Tc-26	PDF
Untitled Abstract: No abstract text available Text: MG100J1ZS40 TOSHIBA TOSHIBA GTR MODULE M G SILICON N CHANNEL IGBT 1 QQJ1 ZS4 Q Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35,i/s Max. trr = 0.15ju& (Max.) • Low Saturation Voltage	OCR Scan	MG100J1ZS40 2-94D2A	PDF
S5J53 Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753 Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction	OCR Scan	200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753	PDF
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9	PDF
GT80J101 Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5 Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412	OCR Scan	GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5	PDF