motorola dram
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM516165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165BV 16M CMOS Wide DRAM Family EDO 4096 Cycle Refresh EDO, 1M x 16, 1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50µ CMOS high–speed
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MCM516165BV/D
MCM516165BV
MCM516165BV)
MCM518165BV)
MCM516165BV
MCM518165BV
MCM516165BV/D*
motorola dram
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HA 1156 wp
Abstract: YXXXX
Text: Order this document by MCM516165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information M CM 516165BV 16M CMOS Wide DRAM Family EDO, 1M x 1 6 ,1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50 i CMOS high-speed silicon-gate process technology. It includes devices organized as 1,048,576
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OCR Scan
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MCM516165BV/D
516165BV
MCM516165BV)
MCM518165BV)
1ATX35269-0
HA 1156 wp
YXXXX
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PDF
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