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    MBRS360 Price and Stock

    onsemi MBRS360T3G

    DIODE SCHOTTKY 60V 3A SMC
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    DigiKey MBRS360T3G Digi-Reel 26,313 1
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    MBRS360T3G Cut Tape 26,313 1
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    MBRS360T3G Reel 26,300 2,500
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    MBRS360T3G Ammo Pack 1
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    Mouser Electronics MBRS360T3G 56,414
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    MBRS360T3G 5,704 8 Weeks 1
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    Newark MBRS360T3G Cut Tape 67,967 1
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    MBRS360T3G Reel 2,500 2,500
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    Onlinecomponents.com MBRS360T3G 1,500
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    Quest Components MBRS360T3G 248
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    Avnet Asia MBRS360T3G 7,500 8 Weeks 7,500
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    Master Electronics MBRS360T3G 1,500
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    New Advantage Corporation MBRS360T3G 185,000 1
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    Vishay Semiconductors VS-MBRS360-M3-9AT

    DIODE SCHOTTKY 60V 3A DO214AB
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    DigiKey VS-MBRS360-M3-9AT Digi-Reel 25,015 1
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    VS-MBRS360-M3-9AT Cut Tape 25,015 1
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    VS-MBRS360-M3-9AT Reel 24,500 3,500
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    onsemi MBRS360BT3G

    DIODE SCHOTTKY 60V 3A SMB
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    DigiKey MBRS360BT3G Cut Tape 11,081 1
    • 1 $0.53
    • 10 $0.355
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    MBRS360BT3G Digi-Reel 11,081 1
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    MBRS360BT3G Reel 10,000 2,500
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    Avnet Americas MBRS360BT3G Reel 82,500 8 Weeks 2,500
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    MBRS360BT3G Ammo Pack 15 Weeks, 3 Days 1
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    MBRS360BT3G Reel 2,500
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    NexGen Digital MBRS360BT3G 11
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    Richardson RFPD MBRS360BT3G 5,000
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    Vishay Semiconductors MBRS360TR

    DIODE SCHOTTKY 60V 3A DO214AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBRS360TR Cut Tape
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    onsemi MBRS360PT3G

    DIODE SCHOTTKY 60V 3A SMC
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    MBRS360 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRS360 On Semiconductor SCHOTTKY BARRIER RECTIFIERS Original PDF
    MBRS360 On Semiconductor 3A 60V Schottky Rectifier Original PDF
    MBRS360BT3G On Semiconductor 3 A, 60 V Schottky Rectifier Original PDF
    MBRS360BT3G On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF
    MBRS360PT3G ON Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 60V 3A SMC-2 Original PDF
    MBRS360T3 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBRS360T3 Motorola SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 40, 60 VOLTS Original PDF
    MBRS360T3 On Semiconductor 3A 60V Schottky Rectifier; Package: SMC; No of Pins: 2; Container: Tape and Reel; Qty per Container: 2500 Original PDF
    MBRS360T3 On Semiconductor Surface Mount Schottky Power Rectifier Original PDF
    MBRS360T3 On Semiconductor 3A 60V Schottky Rectifier Original PDF
    MBRS360T3 On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 403-03, SMC, 2 PIN, Rectifier Diode Original PDF
    MBRS360T3 Microsemi Schottky Rectifier Scan PDF
    MBRS360T3 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 60V, 3A, Pkg Style SMC Scan PDF
    MBRS360T3G On Semiconductor 3A 60V Schottky Rectifier Original PDF
    MBRS360T3G On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 403-03, SMC, 2 PIN, Rectifier Diode Original PDF
    MBRS360TR International Rectifier Schottky Rectifier Original PDF
    MBRS360TR International Rectifier Schottky Rectifier Original PDF
    MBRS360TR International Rectifier Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 60V 3A SMC Original PDF

    MBRS360 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MBRS360T3G

    Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR Technical Data    3374, .       MBRS360-G Green Products MBRS360-G     •      ••  ••     ••  !"   • #   •• $" " 


    Original
    MBRS360-G PDF

    MBRS360TRPBF

    Abstract: marking V36 diode SCHOTTKY
    Text: MBRS360TRPbF Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Small foot print, surface mountable RoHS • Very low forward voltage drop COMPLIANT • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability


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    MBRS360TRPbF MBRS360TRPbF 18-Jul-08 marking V36 diode SCHOTTKY PDF

    DIODE B36

    Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS360T3 10IPK/IO DIODE B36 part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS360T3 MBRS360T3/D PDF

    diode ir36

    Abstract: MBRS360TRPbF MBRS360pbf AN-994
    Text: Bulletin PD-20412 07/04 MBRS360TRPbF SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Description/ Features Major Ratings and Characteristics The MBRS360TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and


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    PD-20412 MBRS360TRPbF MBRS360TRPbF 12-Mar-07 diode ir36 MBRS360pbf AN-994 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS360TRPbF Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode


    Original
    VS-MBRS360TRPbF J-STD-020, 2002/95/EC VS-MBRS360TRPbF 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20412 07/04 MBRS360TRPbF SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Description/ Features Major Ratings and Characteristics The MBRS360TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and


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    PD-20412 MBRS360TRPbF MBRS360TRPbF 08-Mar-07 PDF

    diode ir36

    Abstract: SMC MARKING mj AN-994 MBRS360TR ir36
    Text: Bulletin PD-20586 rev. C 03/03 MBRS360TR SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics Characteristics Description/Features MBRS360TR Units The MBRS360TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


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    PD-20586 MBRS360TR MBRS360TR diode ir36 SMC MARKING mj AN-994 ir36 PDF

    DIODE MOTOROLA B34

    Abstract: marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34
    Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original
    MBRS340T3/D MBRS340T3 MBRS360T3 DIODE MOTOROLA B34 marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34 PDF

    B36 schottky diode

    Abstract: No abstract text available
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device Ăemploys the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS360T3, MBRS360BT3G MBRS360T3/D B36 schottky diode PDF

    Diode marking CODE 5M smb

    Abstract: No abstract text available
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS360T3, MBRS360BT3G MBRS360T3/D Diode marking CODE 5M smb PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS360-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long


    Original
    VS-MBRS360-M3 J-STD-020, DO-214AB VS-MBRS360-M3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: VS-MBRS360TRPbF Vishay High Power Products Schottky Rectifier, 3.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode


    Original
    VS-MBRS360TRPbF J-STD-020, 2002/95/EC VS-MBRS360TRPbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    5M MARKING CODE DIODE SMC

    Abstract: No abstract text available
    Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original
    MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC PDF

    diode ir36

    Abstract: MBRS360TR
    Text: Bulletin PD-20586 rev. D 07/04 MBRS360TR SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular waveform 3.0 A VRRM 60 V IFSM @ t p= 5 µs sine 790 A VF @3.0 Apk, TJ = 125°C


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    PD-20586 MBRS360TR MBRS360TR 08-Mar-07 diode ir36 PDF

    part marking b36 diode

    Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
    Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS360T3, MBRS360BT3G MBRS360T3/D part marking b36 diode MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36 PDF

    MBRS360TRPBF

    Abstract: No abstract text available
    Text: Bulletin PD-20412 07/04 MBRS360TRPbF SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Description/ Features Major Ratings and Characteristics The MBRS360TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and


    Original
    PD-20412 MBRS360TRPbF MBRS360TRPbF PDF

    diode ir36

    Abstract: AN-994 MBRS360TR ir36
    Text: Bulletin PD-20586 rev. A 02/02 MBRS360TR SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics Characteristics Description/Features MBRS360TR Units The MBRS360TR surface-mount Schottky rectifier has been designed for applications requiring low forward drop and small


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    PD-20586 MBRS360TR MBRS360TR diode ir36 AN-994 ir36 PDF

    MBRS340T3G

    Abstract: MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc
    Text: ONSEMI Part # MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRD835LT4G MBRM130LT1G MBRM140T1G MBRM140T3G MBRS1100T3G MBRS130LT3G MBRS140T3G MBRS260T3G MBRS340T3G MBRS360T3G MBRS540T3G MUR120RLG


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    MBR0520LT1G MBR0530T1G MBR0540T1G MBR120ESFT1G MBR130T1G MBRA130LT3G MBRA140T3G MBRA340T3G MBRD340T4G MBRD360T4G MBRS340T3G MBRS360T3G SS34 sma SS14 SOD123 MBRS140T3G SS34 SMB ss24 SMA MBRM140T1G MBRS260T3G SS34 smc PDF

    DIODE ON SEMICONDUCTOR B34

    Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
    Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 r14525 MBRS340T3/D DIODE ON SEMICONDUCTOR B34 marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32 PDF

    diode ir36

    Abstract: ir36
    Text: Bulletin PD-20586 rev. D 07/04 MBRS360TR SCHOTTKY RECTIFIER 3 Amp IF AV = 3.0Amp VR = 60V Major Ratings and Characteristics Description/ Features Characteristics Value Units IF(AV) Rectangular waveform 3.0 A VRRM 60 V IFSM @ t p= 5 µs sine 790 A VF @3.0 Apk, TJ = 125°C


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    PD-20586 MBRS360TR MBRS360TR diode ir36 ir36 PDF

    D0-214AB

    Abstract: 30BQ060 D0214AB HSM350 HSM360 MBRS360T3 SK36
    Text: 3 Amp Schottky Rectifier HSM350, HSM360 — Oh rATur\nr d a m r CATHODE BAND Dim. Inches Minimum D0215AB D0214AB Microsemi Catalog Number HSM350* HSM360* A B C D E F G H Idustry Part Number SK36 MBRS360T3 30BQ060 Working Peak Reverse Voltage .117 .260 .220


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    HSM350, HSM360 D0214AB D0215AB HSM350* HSM360* MBRS360T3 30BQ060 D0-214AB 30BQ060 D0214AB HSM350 HSM360 MBRS360T3 SK36 PDF

    marking B34 diode SCHOTTKY

    Abstract: b34 DIODE schottky diode schottky B34 DIODE MOTOROLA B34 DIODE B36 Schottky Diode B36 marking b34 DIODE B34 B36 schottky diode B34 schottky diode
    Text: MOTOROLA SEMICONDUCTOR — — — TECHNICAL DATA MBRS340T3 MBRS360T3 S u rfa c e M o u n t S c h o tt k y P o w e r R e ctifie r Motorola Preferred Device . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and. metal


    OCR Scan
    PDF