MBRS10150CT Search Results

Contextual Info: MBRS1045CTC . MBRS10150CTC 10.0 Amp. Schottky Barrier Rectifier Current 10.0 A Voltage 45 to 150 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: MBRS1035CT thru MBRS10150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: MBRS1035CT - MBRS10150CT 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers D2PAK Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

10150 CT

Contextual Info: MBRS1035CT - MBRS10150CT CREAT BY ART 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MBRS10150CT

Abstract: MBRS1035CT
Contextual Info: E MBRS1035CT - MBRS10150CT TAIWAN SEMICONDUCTOR [Pb RoHS 10.0 AMPS. Surface M ount Schottky Barrier Rectifiers D*PAK COM PLIANCE .1K im I F e a tu r e s <• -i - ^ •> •> <r ❖ <“ P la s tic rn a te ri a I u s e d c a r rie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s 9 4 V -0

MBRS 140

Abstract: mbrs 260 MBRS10150CT Pure Sine Wave Inverter circuit MBRS1035CT 1045ct
Contextual Info: MBRS1035CT - MBRS10150CT 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers D2PAK Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop

10150 CT

Abstract: 10150CT JEDEC Jc-11 free A1HV MBRS10150CT MBRS1035CT CT 260 K
Contextual Info: s T A IW A N MBRS1035CT - MBRS10150CT SEMICONDUCTOR [Pb 10.0 AMPS. Surface M ount Schottky Barrier Rectifiers RoHS COMPLIANCE D*PAK .1 7 3 1 .1' _ _ C V JH I ¿ « n u ; I Features <• ■fr P la s tic rn 3teri 3 1u s e d c a rrie s U n d e rw rite rs L a b o ra to ry C la ssifica tio n s 94V-0

Contextual Info: MBRS1035CT - MBRS10150CT CREAT BY ART 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Schottky

Contextual Info: MBRS1045CT-Y thru MBRS10150CT-Y Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

10100CT

Contextual Info: MBRS1035CT thru MBRS10150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

MBRS10150CT

Abstract: MBRS1035CT
Contextual Info: RATINGS AND CHARACTERISTIC CURVES MBRS1035CT THRU MBRS10150CT Version: E10

MBRS10150CT

Abstract: MBRS1035CT mbrs 160 10150 CT 1060CT
Contextual Info: MBRS1035CT - MBRS10150CT CREAT BY ART 10.0AMPS Surface Mount Schottky Barrier Rectifiers 2 D PAK Pb RoHS COMPLIANCE Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: MBRS1035CT - MBRS10150CT 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK Features ­ UL Recognized File # E-326854 ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction

fcf - 4 94v - 0 _ 1

Contextual Info: s MBRS1035CT - MBRS10150CT TAIWAN SEMICONDUCTOR 10.0 AMPS. Surface M ount Schottky Barrier Rectifiers RoHS D*PAK C O M P L IA N C E * Features 4- P la s tic rn a te ri a I u s e d c a r rie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s 94V -D

Contextual Info: MBRS1035CT thru MBRS10150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

10150ct

Abstract: 10100ct MBRS1045CT
Contextual Info: MBRS10CT 10 Amp. Schottky Barrier Rectifier D2PAK Voltage 45 to 100 V 2 1 Current 10 A • Metal silicon junction, majority carrier conduction • High current capability 2 3 • The plastic material U/L recognition 94 V-0 1 2 Case 3 Common Cathode Suffix "C"