MBRAF3200T3G Search Results
MBRAF3200T3G Price and Stock
onsemi MBRAF3200T3GDIODE SCHOTTKY 200V 3A SMA-FL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBRAF3200T3G | Digi-Reel | 6,797 | 1 |
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MBRAF3200T3G | Ammo Pack | 1 |
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MBRAF3200T3G | 15,452 |
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MBRAF3200T3G | 4,800 | 111 |
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MBRAF3200T3G | Cut Strips | 2,400 | 9 Weeks | 1 |
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MBRAF3200T3G | Cut Tape | 5,000 | 1 |
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MBRAF3200T3G | Reel | 25,000 | 9 Weeks | 5,000 |
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MBRAF3200T3G |
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MBRAF3200T3G | 1 |
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MBRAF3200T3G | 5,000 |
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MBRAF3200T3G | 9 Weeks | 5,000 |
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MBRAF3200T3G | 10 Weeks | 5,000 |
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MBRAF3200T3G | Cut Tape | 4,800 | 0 Weeks, 1 Days | 5 |
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MBRAF3200T3G | 5,000 | 11 Weeks | 5,000 |
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MBRAF3200T3G | 30,000 |
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MBRAF3200T3G | 5,000 | 1 |
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MBRAF3200T3G | 43,559 |
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MBRAF3200T3G | 18,950 |
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MBRAF3200T3G Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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MBRAF3200T3G |
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MBRAF3200 - DIODE RECTIFIER DIODE, Rectifier Diode | Original |
MBRAF3200T3G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MBRAF3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay |
Original |
MBRAF3200T3G MBRAF3200T3/D | |
Contextual Info: MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay |
Original |
MBRAF3200, NRVBAF3200 MBRAF3200T3/D |