MBR1100 Search Results

Contextual Info: VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: DIGITRON SEMICONDUCTORS MBR170-MBR1100 1A SCHOTTKY RECTIFIERS MAXIMUM RATINGS Rating Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR MBR 170 180 190 1100 70 80 90 100 Unit V Average rectified forward current

MBR1100

Abstract: DO-204AL diode rectifier schottky device data
Contextual Info: Bulletin PD-20587 rev. B 03/03 MBR1100 SCHOTTKY RECTIFIER 1.0 Amp Description/ Features Major Ratings and Characteristics Characteristics MBR1100 Units IF AV Rectangular waveform 1.0 A VRRM 100 V IFSM @ tp = 5 µs sine 200 A VF @ 1 Apk, TJ = 125°C 0.68 V

Contextual Info: Bulletin PD-20592 rev. C 05/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C

Contextual Info: JT : Dim. Inches Minimum A B C D .081 1.10 .160 .028 M illim e te r Maximum Minimum 2.057 27.94 4.064 .711 .107 -.205 .034 Maximum Notes 2.718 Dia. 5.207 .864 Dia. - PLASTIC D041 Microsemi Catalog Number Industry Part Number MS110 MBR1100 SR1010 Working

MBRM110LT1

Abstract: MUR120RL MBRD330T4 1N5822 ss24 MUR240 MBRA120LT3 MBRD630CTT4 MBRD360
Contextual Info: CHAPTER 4 Index http://onsemi.com 645 Rectifier Device Index Device Number Page Device Number 1N4001 26, 29 MBR1100 1N4002 26, 29 1N4003 Page Device Number Page 19, 68 MBR735 20, 161 MBR120ESFT1 15, 17, 71 MBR745 20, 161 26, 29 MBR120ESFT3 15, 17 MBRA120ET3

Contextual Info: MOTOROLA Order this document by MBR1100/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifier MBR1100 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MBR1100S

Contextual Info: MBR 1100S SCHOTTKY DIE SPECIFICATION TYPE: MBR1100S RSingle □Dual Anode General Description: 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

external lead finish

Contextual Info: MBR1100 Preferred Device Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

B1100

Abstract: MBR1100 MBR1100RL
Contextual Info: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

MBR1100

Abstract: DO-204AL
Contextual Info: Bulletin PD-20587 04/01 MBR1100 1.0 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics Description/Features MBR1100 Units IF AV Rectangular 1.0 A VRRM 100 V waveform The MBR1100 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage.

Contextual Info: MBR1100 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: MBR1100 Preferred Device Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

DO-204AL

Abstract: MBR1100
Contextual Info: MBR1100 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

MBR1100

Contextual Info: Bulletin PD-20587 rev. C 12/04 MBR1100 SCHOTTKY RECTIFIER 1.0 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform 1.0 A VRRM 100 V IFSM @ tp = 5 µs sine 200 A VF @ 1 Apk, TJ = 125°C 0.68 V

IR19-IR10

Abstract: marking code IR10 diode MBR190 AN-994 IR10 MBR1100TR MBRS1100TR MBRS190TR IR10 marking code
Contextual Info: Bulletin PD-20592 rev. B 02/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform VRRM 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A

Contextual Info: VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: MBR1100 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)120’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage790m @I(FM) (A) (Test Condition)1.0

IR19-IR10

Abstract: ir10 diode MBR1100TR AN-994 IR10 MBRS1100TR MBRS190TR
Contextual Info: Bulletin PD-20592 rev. C 05/02 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp SMB Description/Features Major Ratings and Characteristics MBR190TR MBR1100TR Units Characteristics IF AV Rectangular waveform 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C

B1100

Abstract: MBR1100 MBR1100RL
Contextual Info: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,

marking code, t2

Abstract: "MARKING CODE T2" MBR1100 MBR120 T4 MARKING CODE marking code T2
Contextual Info: 20F thru MBR1100 MBR1 20 20F 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SOD-123F 0.154 3.9 0.138(3.5) 0.012(0.3) Typ . kK 0.071(1.8) 0.055(1.4) 0.126(3.2) 0.110(2.8 ) 0.067(1.7) 0.051(1.3) 0.035(0.9) Typ . jJ 0.035(0.9) Typ . FEATURES MECHANICAL DATA Schottky barrier chip

DO-204AL

Abstract: MBR1100
Contextual Info: MBR1100 Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

IR19-IR10

Abstract: marking code IR10 diode ir10 diode IR10 marking code PD-20592 IR10 MBR1100TR MBRS1100TR MBRS190TR
Contextual Info: Bulletin PD-20592 rev. E 07/04 MBRS190TR MBRS1100TR SCHOTTKY RECTIFIER 1 Amp IF AV = 1 Amp VR = 90-100V Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform MBR190TR MBR1100TR Units 1.0 A 90 - 100 V IFSM @ tp = 5 µs sine

AN-994

Abstract: MBR1100TR MBRS1100TR MBRS190TR
Contextual Info: Bulletin PD-20592 04/01 MBRS190TR MBRS1100TR 1 Amp SCHOTTKY RECTIFIER SMB Description/Features Major Ratings and Characteristics Characteristics MBR190TR MBR1100TR Units IF AV Rectangular waveform 1.0 A VRRM 100 V IFSM @ tp = 5 µs sine 870 A VF @ 1.0 Apk, TJ=125°C