MBM29L Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

Contextual Info: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: FLASH MEMORY CMOS 4M 512K x 8 BIT MB M29LV004T-1 2-x/MBM29LV004B-i 2-x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to

MBM29LV004B

Abstract: diode MARKING A9 diode MARKING CODE A9 LCC-40P-M02 fujitsu part ordering guide 2M256 Fujitsu TOP SIDE MARKING MBM29LV002B
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20835-3E FLASH MEMORY CMOS 2 M 256 K x 8 BIT MBM29LV002T-12-X/MBM29LV002B-12-X • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

SA612

Abstract: LCC-40P-M02 MBM29LV002B
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20827-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002T-10/-12/MBM29LV002B-10/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20 SA10 SA11 SA12
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20848-1E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LL800T-15S/MBM29LL800B-15S • FEATURES • Voltage range (2.2 V to 2.7 V) for read, program and erase Minimizes system level power requirements

Contextual Info: MBM29LV400T-10PFTN 1/2 IL08 4 M (512 K x 8/256 K x 16)-BIT FLASH MEMORY —TOP VIEW— A15 IN 1 48 A16 IN1 A14 IN 2 47 A13 IN 3 46 GND A12 IN 4 45 DQ15/A-1 I/O A11 IN 5 44 DQ7 I/O A10 IN 6 43 DQ14 I/O A9 IN 7 42 DQ6 I/O A8 IN 8 41 DQ13 I/O BYTE IN NC 9 40 DQ5 I/O

29LV400TC

Contextual Info: FLASH MEMORY CMOS 4M 512K x 8/256K x 16 BIT MBM29LV400TC-70-90-12/MBM29LV400BC-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

C0000-H

Abstract: 29LV160 29lv160 Flash
Contextual Info: FLASH MEMORY 16M 2M x 8/1M x 16 BIT CMOS MBM29LV160T-80-90-12/MBM29LV16 OB-8O/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

29LV400BC

Abstract: BC702
Contextual Info: FLASH MEMORY CMOS 4 M 512 K x 8/256K x 16 BIT MBM29LV400TC-70-90-12/MBM29LV400BC-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-8E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

MBM29LV160TE70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE70/90 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-1E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE -90/12 • GENERAL DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on

FPT-32P-M24

Abstract: DS05-20861-3E F3203
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20861-3E FLASH MEMORY CMOS 1M 128K x 8 BIT MBM29LV001TC-55/-70/MBM29LV001BC-55/-70 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20858-6E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV008TA-70/-90/MBM29LV008BA-70/-90 • GENERAL DESCRIPTION The MBM29LV008TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each. The MBM29LV008TA/BA are offered in a 40-pin TSOP(1) package. These devices are designed to be programmed

MB29LV

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20882-3E FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29LV650UE/651UE 90/12 • DESCRIPTION The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-4E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

DS05

Abstract: MBM29LV080A SA10 SA11 SA12 SA13 SA14 SA15 SA12-11
Contextual Info: MBM29LV080A-70/90 データシート 生産終息品 MBM29SL160TD/160BD -10/12 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

sga31

Abstract: SA124 MBM29LV650UE-90 tRH10 DS05 MBM29LV650UE MBM29LV650UE90 MBM29LV651UE MBM29LV651UE90 Marking code M19
Contextual Info: MBM29LV650UE90/MBM29LV651UE90 データシート 生産終息品 MBM29LV650UE90/MBM29LV651UE90 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及

Contextual Info: MBM29LV800TA-70/-90 MBM29LV800BA-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.