Untitled
Abstract: No abstract text available
Text: Flash Memory Data Sheet Table Latest Version 2.5V Flash AE project October Italic Letter : Revised Point Capacity Part Number English AE Code AE spec Rev, 16M MBM29DD16XTD/BD-10 AE1.0E 32M MBM29DD32XTE/BE-12 August/E MBM29PDD322TE/BE AE0.5E 64M MBM29DD640E-10/12
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TS05DS05-
MBM29DD16XTD/BD-10
MBM29DD32XTE/BE-12
MBM29PDD322TE/BE
MBM29DD640E-10/12
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: AE0.7E FLASH MEMORY CMOS 64M 8M x 8/4M × 16 BIT Dual Operation MBM29DD640E 10/12 n FEATURES • 0.23 µm Process Technology • Simultaneous Read/Write operations (Dual Bank) Two virtual Banks are chosen from the combination of four physical banks (Refer to Table 1)
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MBM29DD640E
48-pin
FPT-48P-M19
FPT-48P-M20
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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PDF
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32 KB SRAM
Abstract: DS05-50208-1E SWITCH SA125
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash
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DS05-50208-1E
MB84LD23381EJ-10
101-ball
MB84VD23381EJ-90
32 KB SRAM
DS05-50208-1E
SWITCH SA125
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V
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DS05-50210-1E
MB84LD23280EA-10/MB84LD23280EE-10
101-ball
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PDF
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash
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DS05-50208-3E
MB84LD23381EJ-10
101-ball
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PDF
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ADVANCED MICRO DEVICES
Abstract: AE2E MB84LD23380EF-10
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD23380EF-10 • FEATURES • Power supply voltage of 2.3 to 2.7V for FCRAM • Power supply voltage of 2.3 to 2.7V for Flash
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MB84LD23380EF-10
101-ball
F0006
ADVANCED MICRO DEVICES
AE2E
MB84LD23380EF-10
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-3E
MB84LD23381EJ-10
101-ball
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PDF
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MB84LD23381EF-10
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD23381EF-10 • FEATURES • Power supply voltage of 2.3 to 2.7V for FCRAM • Power supply voltage of 2.3 to 2.7V for Flash
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MB84LD23381EF-10
101-ball
F0006
MB84LD23381EF-10
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