MB8264 Search Results

Contextual Info: FUJITSU MICROELECTRONICS 7fl De| 374ci?t,5 DDDBDHQ M |~~>7z%-%h 7 FU JITSU • MB85101A-10, MB85101A-12, MB85101A-15 MOS 65,536 x 4-Bit Dynamic RAM Module Description The Fujitsu MB85101A Is a 64K x 4 dynamic RAM high density memory module. It consists of (our MB8264A DRAMs In 18-pad

Contextual Info: P re lim in a re F U JIT SU • M B 8 5 1 0 1 A -1 0 , M B 8 5 1 0 1 A -1 2 , M B 8 5 1 0 1 A -1 5 MOS 65,536 X 4-Bit Dynamic RAM Module D e s c rip tio n The Fu jitsu MB85101A is a 64K x 4 d ynam ic RAM high density m em ory m odule. It c o n sists of fo u r MB8264A ORAMs in 18-pad

MB6264A

Abstract: MB6264 TIC 120 MB8264A-15
Contextual Info: FU JITSU 10 M IC R O E U S C T R O N IC S . IN C -12 15 NMOS 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB8264A is a fully decoded, dynamic NMOS random access memory organized as 65,536 one-bit words. The de­ sign is optimized for high-speed, high per­

Contextual Info: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also

Contextual Info: Preliminary ^ » • M B 8 5 1 0 3 A -1 2, M B 8 5 1 0 3 A -1 5 MÛS 65,536 x 8-Bit Dynamic RAM Module D e s c rip tio n The Fujitsu MB85103A is a 64K x 8 dynam ic RAM high density mem ory m odule. It c o n sists o f e ig h t MB8264A DRAMs in 18-pad LCC packages m ounted on a 22-pin m u ltila yer ceram ic substrate.

Contextual Info: Preliminary M O S • M M e m o r ie s B 8 2 6 4 A - 1 2 - W , M ^ F U JIT S U B 8 2 6 4 A - 1 5 - W N M O S 65,536-Bit Dynamic Random Access Mem ory W ith W ide Tem perature Range Description The MB8264A-W is a 64K x 1 dynam ic RAM intended for operation

MB8264-15

Abstract: MB8264-20 mcm6665 IMS2600 MB6264 pd4164 MB8264 PD416 tms4164 MK4164
Contextual Info: ,J F U J IT S U M ICROELECTRONICS. INC. MS8264-15 ^7 H p p P lr B iW NMOS 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY wm- U-c. DESCRIPTION The Fujitsu MB8264 is a fu lly de­ coded, dynam ic NMOS random ac­ cess memory organized as 65536 one-bit words. The design is optim iz­

MBB264A-18

Contextual Info: preliminary FUJITSU MOS Memories • MB8264A-12-W, MB8264A-15-W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W Is a 64K x 1 dynamic RAM intended for operation over the case temperature range -55*C to 110 *C. The part Is also

MB85101A-15

Abstract: MB85101A-12 MB8264A MB85101A-10 d ram memory ic diagram block ram 16 4bit
Contextual Info: F U J IT S U • M B85101A-10, M B 85101A-12, M B 85101A-15 M O S 65,536 x 4-Bit Dynam ic RAM M odule D e scrip tio n The F u jitsu MB85101A is a 64K x 4 dynam ic RAM high density memory module. It co n sists of four MB8264A DRAM s in 18-pad LC C packages mounted on a 22-pin m ultilayer ceram ic substrate.

MB8264A-15

Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
Contextual Info: P relim inary F U J IT S U M O S M e m o rie s M B 8 2 6 4 A -1 2 -W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM Intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

MB8264

Abstract: MB8264-15 i-117 mb81416
Contextual Info: NMOS Dynamic RAMs Quick Cuide To Products in This Section D ev Ice O rg an ization Ac c m « Tim « max Pow er S u p p ly Volts P o w er D issip atio n Package P ag e MRM17-10 V U i117-12 16K x 1 16K x 1 100 nS 120 nS +5 +5 182/20 mW 160/20 mW 16-pin 16-pin

MN4164P-12A

Abstract: MB8264-15 8264-20 RAM MCM6665L20 mn4164 MB8265-20 MCM6665L25 MN4164P-20 MSM3764-15RS M5K4164P-20
Contextual Info: 6 4 K * m % tt £ CC TRAC •ax ns) TRCY ■in (ns) 4 TCAD ■in (ns) V nM0 S f- > y n D y n a m i c RAM (6 5 5 3 6 x 1) m. tt TAK ■in (ns) TP rain (ns) TBCY min <ns) TDH ■in (ns) TRWC min (ns) V D D or V C C I DD (V) (mA) M5K4164P-20 MITSUBISHI 0—-70

MB8265A-15

Abstract: MB8265A-10
Contextual Info: FUJITSU M ICROELECTRONICS. INC. f t M3NMOS 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY MB8265A-10 MB8265A-12 MB8265A-15 DESCRIPTION The Fujitsu MB8265A is a fully decoded, dynamic NMOS random access memory organized as 65536 one-bit words. The de­ sign is optimized for high-speed, high per­

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

MB8264

Abstract: FPT-80P-M01
Contextual Info: April 1991 Edition 1.0 FUJITSU D A TA SH EET MB87045 VIDEO DRAM CONTROLLER The video controller MB87045 controls general purpose DRAM to store one composite video signal field. The serial-parallel converter circuit in the controller processes the digitized video signal sampling frequency: 3 fsc = 10.7 MHz from a

B82S4

Abstract: MB8264 11A410 TM22S
Contextual Info: FUJITSU M I C R O E L E C T R ON I C S 7fl D e J^BTMITLiS DGDaT?3 1 | ~ 3 7 49 76 2 F U J I T S U M I C R O E L E C T R O N I C S prelim inary 78C 0 2 9 7 3 DT-Ÿ6'21'/:ir FUJITSU MOS M em ories M B 8 2 6 4 Â -1 2-W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS I>e| 374T7bH 0DQ30aH fi W ~ 70C 0 3 0 2 2 0T V i ' 2 3 * 7 FU JITSU • M B 8 5 1 0 3 A -1 2 , M B 8 5 1 0 3 A -1 5 MOS 65,536 x 8-Bit Dynamic RAM Module Daporlptlon The Fujitsu MB85103A Is a 64K x 8 dynamic RAM high density

Contextual Info: 'ï < ISfiP cP A p ril 1991 Edition 1.0 FUJITSU DATA S H E E T MB87045 VIDEO DRAM CONTROLLER The video controller MB87045 controls general purpose DRAM to store one composite video signal field. The serial-parallel converter circuit in the controller processes the digitized video signal sampling frequency: 3 fsc = 10.7 MHz from a