Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11306-5E MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17805B-50/-60/-50L/-60L CMOS 2,097,152 × 8 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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DS05-11306-5E
MB81V17805B-50/-60/-50L/-60L
MB81V17805B
MB81V17805B
F9712
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11306-4E MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17805B-50/-60/-50L/-60L CMOS 2,097,152 × 8 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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DS05-11306-4E
MB81V17805B-50/-60/-50L/-60L
MB81V17805B
MB81V17805B
F9709
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2MX16
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.
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EDC2UV7282B-
16MByte
EDC2UV7282B-60
16-megabyte
168-pin,
MB81V17805B-60
2MX16
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edo dram 50ns 72-pin simm
Abstract: Fujitsu DRAM
Text: July 1997 Revision 1.0 data sheet EDC4UV6482B-60 J/T G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
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EDC4UV6482B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
edo dram 50ns 72-pin simm
Fujitsu DRAM
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mark edo
Abstract: 74ABT16244
Text: July 1997 Revision 1.0 data sheet EDC4BV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC4BV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
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EDC4BV7282B-60
32MByte
32-megabyte
168-pins,
MB81V17805B-60
74ABT16244
mark edo
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Untitled
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet EDC2UV6482B-60 J/T G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
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EDC2UV6482B-60
16MByte
16-megabyte
168-pin,
MB81V17805B-60
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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MB81V18165B-50L
Abstract: MB81V1816
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11304-5E MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB81V18165B-50/-60/-50L/-60L CMOS 1,048,576 × 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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DS05-11304-5E
MB81V18165B-50/-60/-50L/-60L
MB81V18165B
16-bit
F9712
MB81V18165B-50L
MB81V1816
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edo dram 60ns 72-pin simm
Abstract: EOB2UV6482B-60TG-S MB81V17805B-60PFTN
Text: July 1997 Revision 1.0 data sheet EOB2UV6482B-60TG-S 16MByte 2M x 64 CMOS EDO DRAM Module - 3.3V General Description The EOB2UV6482B-60TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line (SO DIMM) memory module.
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EOB2UV6482B-60TG-S
16MByte
EOB2UV6482B-60TG-S
16-megabyte
144-pin,
MB81V17805B-60PFTN
edo dram 60ns 72-pin simm
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113044e
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11304-4E MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB81V18165B-50/-60/-50L/-60L CMOS 1,048,576 × 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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DS05-11304-4E
MB81V18165B-50/-60/-50L/-60L
MB81V18165B
16-bit
F9709
113044e
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1Mx4 EDO RAM
Abstract: edo dram 50ns 72-pin simm edo dram 72-pin simm 4 m 2MX16
Text: July 1997 Revision 1.0 data sheet EDC4UV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.
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EDC4UV7282B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
1Mx4 EDO RAM
edo dram 50ns 72-pin simm
edo dram 72-pin simm 4 m
2MX16
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60JG
Abstract: 74ABT16244 EDC2BV7282B-60JG-S MB81V17805B-60PJ
Text: July 1997 Revision 1.0 data sheet EDC2BV7282B-60JG-S 16MByte 2M x 72 CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
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EDC2BV7282B-60JG-S
16MByte
EDC2BV7282B-60JG-S
16-megabyte
168-pins,
MB81V17805B-60PJ
74ABT16244
60JG
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Untitled
Abstract: No abstract text available
Text: MEMORY 2 M X 8 BIT HYPER PAGE OD E MB81V1 f oUOtí-OU/"160/7 0 A C D C A / CRA D ’ M>0L i CMOS 2,097,152 x 8 Bit Hyper Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The MB81V17805B features a “hyper page” mode of operation whereby
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MB81V1
MB81V17805B
1024x8
D-63303
F9712
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17805B-50/-60 CMOS 2,097,152 x 8 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The MB81V17805B features a “hyper page” mode of operation whereby
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PDF
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MB81V17805B-50/-60
MB81V17805B
MB81V17805B
F28040S-2C-1
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 1 M x 16 BIT HYPER PAGE MODE DYNAMIC RAM MB81V18165 B-50/-60/-50L/-60 L CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V18165B features a “hyper page” mode of operation whereby
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MB81V18165
B-50/-60/-50L/-60
MB81V18165B
16-bit
MB81V18165B-50/-60/-50L/-60L
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV6482B-60 J/T G-S 16MByte (2M x 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
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OCR Scan
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PDF
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EDC2UV6482B-60
16MByte
16-megabyte
168-pin,
MB81V17805B-60
16MByte
72-pin
144-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4UV6482B-60 J/T G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.
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OCR Scan
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EDC4UV6482B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
32MByte
72-pin
144-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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OCR Scan
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PDF
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EDC2UV7282B-
16MByte
EDC2UV7282B-60
16-megabyte
168-pin,
MB81V17805B-60
72-pin
144-pin
168-pin
200-pin
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Untitled
Abstract: No abstract text available
Text: MEMORY 1 M x 16 B IT HYPER PAGE MOD E D Y CRA MB81V18165B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM DESCRIPTION The Fujitsu MB81V18165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The MB81V18165B features a “hyper page” mode of operation whereby
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PDF
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MB81V18165B-50/-60/-50L/-60L
MB81V18165B
16-bit
D-63303
F9712
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Untitled
Abstract: No abstract text available
Text: DRAM 5 i DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, Ta=0°C to +706C Organization (Wxb) Part Number Access Time max. (ns) Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Operating MB81V17800A-60 60[15¡'1 110[40]*3 432 M B81V 17800A-70
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MB81V17800A-60
7800A-70
B81V17800A-60L
MB81V17800A-70L
V17800B-50
MB81V17800B-60
MB81V17800B-50I
MB81V17800B-60L
MB81V17805A-60
MB81V17805A-70
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4UV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized
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OCR Scan
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PDF
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EDC4UV7282B-60
32MByte
32-megabyte
168-pin,
MB81V17805B-60
72-pin
144-pin
168-pin
200-pin
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2B V7282B-60JG-S 16MByte 2M x 72 CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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OCR Scan
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PDF
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V7282B-60JG-S
16MByte
EDC2BV7282B-60JG-S
16-megabyte
168-pins,
MB81V17805B-60PJ
74ABT16244
72-pin
144-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EOB2UV6482B-60TG-S 16MByte 2M x 64 CMOS EDO DRAM Module -3.3V General Description The EOB2UV6482B-60TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line (SO DIMM) memory module.
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OCR Scan
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PDF
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EOB2UV6482B-60TG-S
16MByte
EOB2UV6482B-60TG-S
16-megabyte
144-pin,
MB81V17805B-60PFTN
16MByte
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