Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11024-2E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB811171622A-125/-100/-84/-67 CMOS 2-BANK 524,288-WORD × 16 BIT Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11024-2E
MB811171622A-125/-100/-84/-67
288-WORD
MB811171622A
16-bit
F9703
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11024-2E MEMORY CMOS 2 x 512 K × 16 BITS SYNCHRONOUS DYNAMIC RAM MB811171622A-125/-100/-84/-67 CMOS 2-BANK 524,288-WORD × 16 BITS Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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DS05-11024-2E
MB811171622A-125/-100/-84/-67
288-WORD
MB811171622A
16-bit
F9703
MP-SDRAMM-DS-20363-7/97
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LCBD
Abstract: No abstract text available
Text: July 1996 Edition 1.0 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ PRODUCT PROFILE SHEET MB811171622A-125/-100/-84/-67 [2K Refresh] CMOS 2 x 512K x 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 524,288-WORDS x 16-BIT
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MB811171622A-125/-100/-84/-67
288-WORDS
16-BIT
MB811171622A
16-bit
LCBD
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irp 540
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11115-2E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8501S064AE-100/-84/-67 144-pin, 2 Clock, 1-bank, based on 1 M × 16 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8501S064AE is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM
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DS05-11115-2E
MB8501S064AE-100/-84/-67
144-pin,
MB8501S064AE
MB811171622A
144-pin
MB8501S06tives
irp 540
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Untitled
Abstract: No abstract text available
Text: March 1997 Revision 2.1 DATA SHEET SDC2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC2UV6412-
16MByte
16-megabtye
168-pin,
MB811171622A-
1Mx16
MP-SDRAMM-DS-20319-3/97
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Untitled
Abstract: No abstract text available
Text: March 1997 Revision 2.1 DATA SHEET SOB1UV6412- 67/84/100/125 T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SOB1UV6412-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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SOB1UV6412-
144-pin,
MB811171622A-
1Mx16
125MHz)
10ormation
MP-SDRAMM-DS-20371-3/97
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Untitled
Abstract: No abstract text available
Text: March 1997 Revision 2.1 DATA SHEET SDC1UV6412 A -(67/84/100/125)T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SDC1UV6412(A)-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC1UV6412
168-pin,
MB811171622A-
1Mx16
125MHz)
100MHzormation
MP-SDRAMM-DS-20317-3/97
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Telefunken
Abstract: dark detector alarm using 555 timer BLOCK DIAGRAM MPC801 MPC821 MPC823 MPC860SAR MPC860T MPC850 MPC860 KYOCERA 50Mhz oscillator
Text: MPC8xxFADS User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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37-pin
Telefunken
dark detector alarm using 555 timer BLOCK DIAGRAM
MPC801
MPC821
MPC823
MPC860SAR
MPC860T
MPC850
MPC860
KYOCERA 50Mhz oscillator
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lg r40 MOTHERBOARD CIRCUIT diagram
Abstract: MPC801 MPC821 MPC823 MPC850 MPC860 MPC860SAR MPC860T MPC813 3Cs 6 PIN SMD CHIP
Text: MPC8xxFADS User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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37-pin
lg r40 MOTHERBOARD CIRCUIT diagram
MPC801
MPC821
MPC823
MPC850
MPC860
MPC860SAR
MPC860T
MPC813
3Cs 6 PIN SMD CHIP
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video transceiver
Abstract: RJ45 datasheet 8P8C DALE SOMC1603 27Mhz tranceiver of 6 channel datasheet ba24 ethernet RJ45 receptacle somc1603 MPC801 D1639 MPC823
Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. 10/97 MPC8XXFADS Design Specification—Rev 0.1 PRELIMINARY For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee
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Untitled
Abstract: No abstract text available
Text: July 1996 Revision 1.0 DATA SHEET SDC2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description IN AD FO V A R N M C AT ED IO N The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SDC2UV6412-
16MByte
16-megabtye
168-pin,
MB811171622A-
1Mx16
MP-DRAMM-DS-20319
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MB87F
Abstract: MetaWare ARC SOP50 PIN MB87L2250 MB87F2250 MB87L2250 MB377 nokia c9 SFH-506 SAA7121
Text: Multimedia IC’s MB87L2250 SingleChip MPEG-Decoder Evaluation Board Final SCART Version Hardware and Software Installation Fujitsu Mikroelektronik GmbH Edition 0.3, Last Modified on 09.12.1999, by Edmund Bendels MB87L2250-E/B 1 December 1999 Multimedia IC’s
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MB87L2250
MB87L2250-E/B
MB87L2250
which05-R
0805-R
MB87F
MetaWare ARC
SOP50
PIN MB87L2250
MB87F2250
MB377
nokia c9
SFH-506
SAA7121
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"write only memory"
Abstract: 8MB SDRAM MPC603UM/AD SDRAM Controller SDRAM DIMM 1997 sdram pcb layout MPC106 MPC950 MPC972 MPC980
Text: AN1722/D Motorola Order Number 12/97 REV 1 Application Note AR Y SDRAM System Design using the MPC106 by Gary Milliorn RISC Applications 1.1 Overview PR EL IM There are numerous possibilities available in designing systems, although most will probably fall into the typical category shown in Figure 1. This document refers to
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AN1722/D
MPC106
"write only memory"
8MB SDRAM
MPC603UM/AD
SDRAM Controller
SDRAM DIMM 1997
sdram pcb layout
MPC106
MPC950
MPC972
MPC980
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MPC106
Abstract: mpc980 microstripline FR4 MPC740 MPC7400 MPC7410 MPC745 MPC750 MPC755 MPC972
Text: Freescale Semiconductor, Inc. AN1722/D Rev. 1.1, 6/2003 Freescale Semiconductor, Inc. SDRAM System Design Using the MPC106 by Gary Milliorn RISC Applications This document discusses the implementation of an SDRAM-based memory system using the MPC106. The MPC106 PCI Bridge/Memory Controller provides a bridge between the
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AN1722/D
MPC106
MPC106.
MPC106
MPC603e,
MPC740,
MPC750,
MPC745,
MPC755,
MPC7400
mpc980
microstripline FR4
MPC740
MPC7410
MPC745
MPC750
MPC755
MPC972
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PQ-33
Abstract: PQ-12 PQ-31 E1BBBC04
Text: MOTOROLA SEMICONDUCTOR DESIGN CONCEPT DC-11/10/98 - REV 1.0 MPC8xx SDRAM Interface Heinz Wrobel Motorola GmbH, Munich Janet Snyder, Spencer Jackson Motorola NetComm, Austin Gordon Lawton Motorola Ltd., East Kilbride 1. Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two advantages over
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DC--11/10/98
PQ-33
PQ-12
PQ-31
E1BBBC04
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mb87020
Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
Text: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,
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SD-SG-20342-9/96
mb87020
tag 9335
MB87086
MB87086A
FPF21C8060UA-92
2M X 32 Bits 72-Pin Flash SO-DIMM
prescaler fujitsu mb506
MB3776A
mb501l
MB506 ULTRA HIGH FREQUENCY PRESCALER
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYJuly 1996 Edition 1.0 _ _ PRODUCT PROFILE SHEET : MB811171622A-125/-100/-84/-67 F U J IT S U [2K Refresh] CMOS 2 x 512Kx 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 524,288-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory
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MB811171622A-125/-100/-84/-67
512Kx
288-WORDS
16-BIT
MB811171622A
16-bit
MB811171622A-125
MB811171622A-100
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Untitled
Abstract: No abstract text available
Text: MÊËtm Ë ÊÊÊÊm • ■ ■ ilillll! SYNCHRONOUS MB8501S064AD-100/-84/-67 144-pin, 1 Clock, 1-bank, based on 1 M x 16 BIT SDRAMs with SPD DESCRIPTION The Fujitsu MB8501S064AD is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting ot tour MB811171622A devices which organized as two banks ot 1 M x 16 bits and
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MB8501S064AD-100/-84/-67
144-pin,
MB8501S064AD
MB811171622A
144-pin
F9703
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Untitled
Abstract: No abstract text available
Text: MEMORY 1 M x 84 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8501 S064AE-100/-84/-67 144-pin, 2 Clock, 1-bank, based on 1 M x 16 Bit SDRAMs with SPD DESCRIPTION The Fujitsu MB8501S064AE is afully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting of four MB811171622A devices which organized as two banks of 1 M x 16 bits and a 2K-bit
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MB8501
S064AE-100/-84/-67
144-pin,
MB8501S064AE
MB811171622A
144-pin
F9709
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D023
Abstract: bst h 05 90 3d T3R marking
Text: FUJITSUDA T A UCTO D S05-11024-2 Ï MEMORY CMOS 2 x 512 Kx 16 BITS SYNCHRONOUS DYNAMIC RAM M B 8 1 1 1 7 1 6 2 2 A - 1 2 5 / - 1 / - 8 4 / - 6 7 CMOS 2-BANK 524,288-WORD x 16 BITS Synchronous Dynamic Random Access Memor DESCRIPTION The Fujitsu MB811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containin
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MB811171622A-125/-100/-84/-67
288-WORD
MB811171622A
16-bit
374175b
B811171622A-125/-100/-84/-67
50-LEAD
FPT-50P-M05)
D023
bst h 05 90 3d
T3R marking
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Untitled
Abstract: No abstract text available
Text: _ January 1997 Revision 2.0 _ <p FUJITSU D A TA SH EET SDC1UV6412 A -(67/84/100/125)T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SDC1UV6412(A)-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as
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SDC1UV6412
168-pin,
MB811171622A-
1Mx16
V6412
168-pin
SDC1UV6412)
SDC1UV6412A)
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Untitled
Abstract: No abstract text available
Text: August 1996 Revision 1.0 I DATA SHEET S 0 B 2 U V 6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIM M) package.
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16MByte
SOB2UV6412-
16-megabtye
144-pin,
MB811171622A-
200mV.
144-pin
374T75b
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Untitled
Abstract: No abstract text available
Text: January 1997 Revision 2 .0 D A T A S H E E T - SDC2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SDC2UV641
16MByte
SDC2UV6412-
16-megabtye
168-pin,
MB811171622A-
1Mx16
cl75b
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Untitled
Abstract: No abstract text available
Text: MEMORY 1 M x 64 BIT 0/-84/-67 168-pin, 1 Clock, 1-bank, based on 1 M x 16 BIT SDRAMs with SPD DESCRIPTION The Fujitsu MB8501S064AB is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting of four MB811161622A devices which organized as two banks of 1 M x 16 bits and a 2 K-bit
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168-pin,
MB8501S064AB
MB811161622A
168-pin
F9703
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