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Micron Technology Inc M58WR032KT70ZB6F-TR IC FLASH 32MBIT PARALLEL 56VFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	M58WR032KT70ZB6F-TR	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micron Technology Inc M58WR032KT70ZB6F NOR Flash Parallel/Serial 1.8V 32Mbit 2M x 16bit 70ns 56-Pin VFBGA T/R - Tape and Reel (Alt: M58WR032KT70ZB6F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M58WR032KT70ZB6F	Reel		18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

M58WR032KT Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M58WR032KT70ZB6F TR		Micron Technology	Integrated Circuits (ICs) - Memory - IC FLASH 32M PARALLEL 56VFBGA		Original	PDF
M58WR032KT70ZB6FTR		Numonyx	Memory, Integrated Circuits (ICs), IC FLASH 32MBIT 70NS 56VFBGA		Original	PDF

M58WR032KT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
F8000-FFFFF Abstract: No abstract text available Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	PDF	M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit F8000-FFFFF
M58WR032KT Abstract: M58WR032KB M58WR064KB M58WR016KT numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K M58WR016KB Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	PDF	M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit M58WR064KB numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K
15H101 Abstract: No abstract text available Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	PDF	M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit 15H101
M36W0R5040 Abstract: m36w0r5040t M36W0R5040T5 M36W0R5040B5 8815h 8814h Text: M36W0R5040T5 M36W0R5040B5 32-Mbit 2 Mbits x16, multiple bank, burst flash memory and 16-Mbit (1 Mbit ×16) PSRAM, 1.8 V supply, MCP Features • ■ ■ ■ Multi-chip package – 1 die of 32-Mbit (2 Mbits x16, multiple bank, burst) flash memory – 1 die of 16 Mbit (1 Mbit x16) PSRAM	Original	PDF	M36W0R5040T5 M36W0R5040B5 32-Mbit 16-Mbit M36W0R5040T5: 8814h M36W0R5040B5: 8815h TFBGA88 M36W0R5040 m36w0r5040t M36W0R5040B5 8814h
M36W0R5040 Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP Text: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits	Original	PDF	M36W0Rx0x0x7 64-Mbit 16-Mbit 32-Mbit M36W0R5030T7 M36W0R5040T7: 8814h M36W0R5030B7 M36W0R5040B7: 8815h M36W0R5040 M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT Numonyx MCP