M58CR064C Search Results

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

88CAh

Contextual Info: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA

Contextual Info: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA

8802H

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers

Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

A0-A21

Abstract: CR10 M58CR064C M58CR064D M58CR064P M58CR064Q TFBGA56
Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers

88-CB

Contextual Info: M58CR064C M58CR064D 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

M58CR064C

Abstract: A0-A21 CR10 M58CR064D M58CR064P M58CR064Q TFBGA56
Contextual Info: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)

TA247

Abstract: M58CR064C M58CR064D TFBGA56
Contextual Info: TA247 TECHNICAL ARTICLE ST challenges 3G Mobile Communications: High-speed 64 Mbit Low Voltage Flash Memory . Marco Redaelli, STMicroelectronics, Agrate, Italy Future third generation mobile communications will support high-speed multimedia data transfers

QRMM0010

Contextual Info: QRMM0010 QUALIFICATION REPORT M36DR864CB/DB: 64 Mbit x16, Burst Flash Memory and 8 Mbit (x16) SRAM, 1.8V Multiple Memory Product INTRODUCTION The M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM components have separate power supplies and grounds and are distinguished by three chip enable inputs.

AN1655

Abstract: C1655C M58CR032C M58CR032D M58CR064C M58CR064D M58CR064P M58CR064Q
Contextual Info: AN1655 APPLICATION NOTE Software Drivers for the M58CR032 and M58CR064 Flash Memories CONTENTS • M58CR032 and M58CR064 PROGRAMMING MODEL – Bus Operations Commands and ■ STATUS REGISTER ■ A DETAILED EXAMPLE ■ HOW TO USE THE SOFTWARE DRIVER – General Considerations