54HC
Abstract: 74HC M54HC21 M74HC21
Text: HS-CMOS INTEGRATED CIRCUITS M54HC21 «WHC21 043 z P R E LIM IN A R Y D A TA DUAL 4-INPUT AND GATE DESCRIPTION The M54/74HC21 is a high speed CM OS DUAL 4-INPUT AND GATE fabricated in silicon gate C2MOS technology. It has the sam e high speed perform ance of LSTTL com bined with true CMOS
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OCR Scan
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M54HC21
fff7titC21
M54/74HC21
54HC
74HC
M74HC21
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74hc21
Abstract: No abstract text available
Text: M54HC21 M74HC21 Æ 7 SCS-THOM SON Ä 7#„ RHD glSÌ IIL[l(§ì[n!©li8B(gS DUAL 4-INPUT AND GATE • HIGH SPEED tPD = 11 ns (TYP. at VCc = 5V ■ LOW POWER DISSIPATION ICC = 1 /»A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY V n IH = V nil = 28% Vcc (MIN.)
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OCR Scan
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M54HC21
M74HC21
M74HC21
54/74LS21
M54/74HC21
M54/74HC21
74hc21
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CI 74LS21
Abstract: 54HC 74HC M54HC21 M74HC21
Text: SGS-THOMSON M54HC21 M74HC21 DUAL 4-INPUT AND GATE HIGH SPEED tPD = 11 ns TYP. at VCc = 5V LOW POWER DISSIPATION lCc = 1 /*A (MAX.) at Ta = 25°C HIGH NOISE IMMUNITY V NIH = VN|L = 28% VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE
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OCR Scan
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M54HC21
M74HC21
54/74LS21
M54/74HC21
M54/74HC21
CI 74LS21
54HC
74HC
M74HC21
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Untitled
Abstract: No abstract text available
Text: r z 7 S C S -T H O M S O N Ä 7# M54HC21 M74HC21 DUAL 4-INPUT AND GATE HIGH SPEED tpD = 10 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 "C HIGH NOISE IMMUNITY Vnih = Vnil = 28% Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTLLOADS SYMMETRICAL OUTPUT IMPEDANCE
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OCR Scan
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M54HC21
M74HC21
54/74LS21
M54HC21F1R
M74HC21M1R
M74HC21B1R
M74HC21C1R
M54/74HC21
0QS4367
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cmos 74ls21
Abstract: No abstract text available
Text: fZ 7 SCS-THOM SON Ä 7 # ¡« [iœ y iO T « ! M54HC21 M74HC21 DUAL 4-INPUT AND GATE HIGH SPEED tPD = 10 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 1 pA (MAX.) AT Ta = 25 "C HIGH NOISE IMMUNITY V nih = V nil = 28% V c c (MIN.) OUTPUT DRIVE CAPABILITY
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OCR Scan
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M54HC21
M74HC21
54/74LS21
21F1R
21B1R
M54/74HC21
cmos 74ls21
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M54HC21
Abstract: M54HC21F1R M74HC21 M74HC21B1R M74HC21C1R M74HC21M1R
Text: M54HC21 M74HC21 DUAL 4-INPUT AND GATE . . . . . . . . HIGH SPEED tPD = 10 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28% VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE
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Original
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M54HC21
M74HC21
54/74LS21
M54HC21F1R
M74HC21M1R
M74HC21B1R
M74HC21C1R
M54/74HC21
M54HC21
M54HC21F1R
M74HC21
M74HC21B1R
M74HC21C1R
M74HC21M1R
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M54HC21
Abstract: M54HC21F1R M74HC21 M74HC21B1R M74HC21C1R M74HC21M1R
Text: M54HC21 M74HC21 DUAL 4-INPUT AND GATE . . . . . . . . HIGH SPEED tPD = 10 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28% VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE
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M54HC21
M74HC21
54/74LS21
M54HC21F1R
M74HC21M1R
M74HC21B1R
M74HC21C1R
M54/74HC21
M54HC21
M54HC21F1R
M74HC21
M74HC21B1R
M74HC21C1R
M74HC21M1R
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON *JÆURjflDÊIMJllILiÊTrmDÊi M54HC21 M74HC21 DUAL 4-INPUT AND GATE • HIGH SPEED tpD = 11 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION Icc = 1 #iA (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY V nih = VN|L = 28“/ o VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY
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OCR Scan
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M54HC21
M74HC21
M54HC21
M74HC21
54/74LS21
M54/74HC21
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M54HC21
Abstract: M54HC21D M54HC21K
Text: M54HC21 RAD-HARD DUAL 4-INPUT AND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 11ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
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M54HC21
SCC-9201-108
DILC-14
FPC-14
M54HC21D
M54HC21K
M54HC21D1
M54HC21K1
M54HC21
M54HC21D
M54HC21K
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940900701F
Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC
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M54HCxxx
M54HCTxxx
Flat-16
DIL-16
Flat-14
DIL-14
M54HCTxxx
940900701F
54HC4053
54HC273
940501301F
920305001F
940104801F
920110601F
54HC08
920112001F
940806401F
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M54HC132
Abstract: M54HC595KG M54HC138KG 920112001F
Text: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics
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M54HCxxx,
M54HCTxxx
Flat-14
DIL-14
Flat-16
DIL-16
DocID17367
M54HC132
M54HC595KG
M54HC138KG
920112001F
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54HC4053
Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC
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M54HCxxx
M54HCTxxx
Flat-14
DIL-14
Flat-16
DIL-16
Flat-20
DIL-20
Flat-24
DIL-24
54HC4053
940104801F
940900701F
54HC08
940806401F
M54HC245K
54HC273
920110501F
940104701F
920110601F
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Untitled
Abstract: No abstract text available
Text: SbE D • 7 ^ 2 3 ? D 0 3 eJ 7 74 Û12 ■ S G T H r z z S C S -T H O M S O N M 54H C 21 ^ ■ 7 # . ¡ a ffim iC T E iM n ig s _ M 7 4 H C 2 1 S Q S - THOMSON 2 / DUAL 4-INPUT AND GATE ■ HIGH SPEED tpo = 11 ns TYP. at V c c = 5V ■ LOW POWER DISSIPATION
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940900703F
Abstract: No abstract text available
Text: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC
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Original
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M54HCxxx
M54HCTxxx
Flat-14
DIL-14
Flat-16
DIL-16
Flat-20
DIL-20
Flat-24
DIL-24
940900703F
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