M48T128V Search Results

M48T128V

Abstract: M48T128Y M48T35
Contextual Info: M48T128Y M48T128V 3.3V-5V 1 Mb 128K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT

M48T128V

Abstract: M48T128Y wr100
Contextual Info: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT

STMicroelectronics date code format SWITCHING REGULATOR

Contextual Info: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT

TIMEKEEPER SRAM

Abstract: M48T128V M48T128Y 128Kbx8 real time clock with sram
Contextual Info: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT

M48T128V

Abstract: M48T128Y
Contextual Info: M48T128Y M48T128V 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

M48T128V

Abstract: M48T128Y circuit diagram of o rtc split ac
Contextual Info: M48T128Y M48T128V 5.0 OR 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

M48T128V

Abstract: M48T128Y
Contextual Info: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

5746

Abstract: M48T128V M48T128Y
Contextual Info: M48T128Y M48T128V 5.0 or 3.3 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds ■ Automatic power-fail chip deselect and WRITE

M48T128V

Abstract: M48T128Y
Contextual Info: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT

Contextual Info: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE,

D 4242

Abstract: M48T128V M48T128Y M48T35
Contextual Info: M48T128Y M48T128V 3.3V-5V 1 Mb 128K x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY and CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT

M48T128V

Abstract: M48T128Y
Contextual Info: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

STMicroelectronics package outline dip

Contextual Info: M48T128Y M48T128V 3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM • INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS ■ AUTOMATIC POWER-FAIL CHIP DESELECT

M48T128V

Abstract: M48T128Y
Contextual Info: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE,

M48T128V

Abstract: M48T128Y
Contextual Info: M48T128Y M48T128V* 5.0 or 3.3V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

TSOP32 FOOTPRINT

Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
Contextual Info: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave

m48t35

Abstract: NVRAM 1KB M48Z02 M48Z08 M48Z12 M48Z128 M48Z128Y M48Z18 M48Z35 M48Z35V
Contextual Info: ZEROPOWER and TIMEKEEPER NVRAMs BATTERY-BACKED SRAMS, OPTIONAL CLOCK/CALENDAR ZEROPOWER products integrate low power SRAMs with a powerfail control circuit and a long-life lithium battery. The power-fail circuit monitors the external power supply voltage. If this falls below

M48T128Y

Abstract: STMicroelectronics
Contextual Info: M48T128Y 5.0 V, 1 Mbit 128 Kb x 8 TIMEKEEPER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: 5 7 . SGS-THOMSON M 48T128Y M 48T128V 3.3V-5V 1Mbit 128Kb x 8 TIMEKEEPER SRAM PRELIMINARY DATA INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS

Contextual Info: M 48T128Y M 48T128V 3.3V-5V 1Mbit 128Kb x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, AND CRYSTAL BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS AUTOMATIC POWER-FAIL CHIP DESELECT

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

K6X8008T2B-UF55

Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

14270x

Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,