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    AOI32

    Abstract: No abstract text available
    Text: SEEÚ TECHNOL OGY INC 11E I> • flina33 Q0027M4 0 E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ 64K Byte FLASH Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225ps max


    OCR Scan     		PDF flina33 Q0027M4 E/M47F512 225ps M47F512) E47F512) MD400084/· ail1233 0QG27S3 AOI32

    6142E

    Abstract: MD4000 SEEQ eprom
    Text: E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 64K Byte FLASH Erasable Non- Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 ps max rn ~55°C to +125-C Temp Read M47FS12


    OCR Scan     		PDF E/M47F512 125-C M47FS12) E47F512) MD400083/- E/M47F512 47F512 6142E MD4000 SEEQ eprom

    6142E

    Abstract: No abstract text available
    Text: E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 64K Byte FLASH Erasable Non- Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 fis max ■ - 5 5 °C to +125°C Temp Read M47F512


    OCR Scan     		PDF E/M47F512 M47F512) E47F512) MD400083/- 47F512 MD400083 6142E