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    M29W400 Price and Stock

    Micron Technology Inc M29W400BB90N1

    IC FLASH 4MBIT PARALLEL 48TSOP
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    Micron Technology Inc M29W400BB90N6

    IC FLASH 4MBIT PARALLEL 48TSOP
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    Micron Technology Inc M29W400BT90N1

    IC FLASH 4MBIT PARALLEL 48TSOP
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    Micron Technology Inc M29W400DB70N1

    IC FLASH 4MBIT PARALLEL 48TSOP I
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    Micron Technology Inc M29W400DB70N6

    IC FLASH 4MBIT PARALLEL 48TSOP I
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    Win Source Electronics M29W400DB70N6 4,460
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    Find more M29W400 price and stock on Findchips.com

    M29W400 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M29W400 STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B STMicroelectronics NOT FOR NEW DESIGN - 4 MBIT (512KB X8 OR 256KB X1 Original PDF
    M29W400B STMicroelectronics NOT FOR NEW DESIGN - 4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY Original PDF
    M29W400B-100M1R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M1R STMicroelectronics 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M1TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M5R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M5R STMicroelectronics 4 Mbit (256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M5TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M6R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M6R STMicroelectronics 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M6TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100M6TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100N1R STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100N1R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100N1TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100N1TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100N5R STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100N5R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400B-100N5TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    ...

    M29W400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M29W400B

    Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS


    Original     		PDF M29W400T M29W400B 512Kb 256Kb M29W400T M29W400B M29W400BT M29W400BB FBGA48 M29W400 M29W400BB

    Untitled

    Abstract: No abstract text available
    Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical


    Original     		PDF M29W400BT M29W400BB 512Kb 256Kb TSOP48

    M29W400

    Abstract: nc 555 M29W400BB M29W400BT TFBGA48
    Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME FBGA – 10µs per Byte/Word typical


    Original     		PDF M29W400BT M29W400BB 512Kb 256Kb TSOP48 TFBGA48 M29W400 nc 555 M29W400BB M29W400BT TFBGA48

    EN29LV400A

    Abstract: M29W400DT
    Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV400A vs NUMONYX Flash M29W400DT This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. www.eonssi.com


    Original     		PDF EN29LV400A M29W400DT M29W400DT EN29LV400A EN29LV400A: M29W400DT:

    Untitled

    Abstract: No abstract text available
    Text: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME


    Original     		PDF M29W400DT M29W400DB 512Kb 256Kb TSOP48

    M29W800FT

    Abstract: No abstract text available
    Text: M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit 1 Mbitx8 / 512 Kbit×16 ; 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access time: 55 ns, 70 ns, 90 ns (only available


    Original     		PDF M29W800FT M29W400FT M29W800FB M29W400FB 64-bit

    QR116

    Abstract: M29W400
    Text: QUALIFICATION REPORT M29W400 T6-U20: 4 Mb x8/x16 SINGLE SUPPLY FLASH MEMORY in SO44 and TSOP48 INTRODUCTION The M29W400 is a 4 Mb Low Voltage Single Supply (2.7-3.6V) Flash memory organized as 512K bytes of 8 bits each or 256K words of 16 bits each. It is offered in SO44 and TSOP48 packages. It can be


    Original     		PDF M29W400 T6-U20: x8/x16) TSOP48 TSOP48 T6-U20 100ns QR116

    3348DC

    Abstract: No abstract text available
    Text: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read SO44 (M)(1) „ Access time: 45, 55, 70 ns „ Programming time – 10 s per byte/word typical


    Original     		PDF M29W400DT M29W400DB 0020h 3348DC

    M29W400BB

    Abstract: M29W400BT TFBGA48 M29w400 application
    Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME FBGA – 10µs per Byte/Word typical


    Original     		PDF M29W400BT M29W400BB 512Kb 256Kb TSOP48 TFBGA48 M29W400BB M29W400BT TFBGA48 M29w400 application

    Untitled

    Abstract: No abstract text available
    Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical


    Original     		PDF M29W400BT M29W400BB 512Kb 256Kb TSOP48 FBGA48

    J-STD-020B

    Abstract: M29W400D M29W400DB M29W400DT TFBGA48
    Text: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME


    Original     		PDF M29W400DT M29W400DB 512Kb 256Kb J-STD-020B M29W400D M29W400DB M29W400DT TFBGA48

    AN943

    Abstract: M29F400 M29F400B M29F400T M29W400 M29W400B M29W400T AD1-AD15 M29F400BC
    Text: AN943 APPLICATION NOTE SOFTWARE DRIVERS for M29F400 and M29W400 FLASH MEMORIES CONTENTS Introduction The M29F400 Programming Model Modifying code from Am29F400 Generating SGS-THOMSON Code C Library Functions Adapting the Software for the Target System Limitations of the code


    Original     		PDF AN943 M29F400 M29W400 M29F400 Am29F400 M29F400A M29F400B AN943 M29F400T M29W400B M29W400T AD1-AD15 M29F400BC

    Untitled

    Abstract: No abstract text available
    Text: M29W400DT M29W400DB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 45, 55, 70ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical


    Original     		PDF M29W400DT M29W400DB 512Kb 256Kb TSOP48

    M29F400B

    Abstract: M29W400B QRFL0006
    Text: QRFL0006 QUALIFICATION REPORT M29F400B, M29W400B T6X-U35: 4 Mbit x8/x16 Single Supply Flash Memory INTRODUCTION The M29F400B and M29W400B are 4 Mbit Single Supply (respectively 5V and 3V) Flash memory products with Boot Block partitioning and organized as 512 KByte of 8 bits each or 256 Kword of 16 bits each.


    Original     		PDF QRFL0006 M29F400B, M29W400B T6X-U35: x8/x16) M29F400B T6X-U35 QRFL0006

    FBGA48

    Abstract: M29W400BB M29W400BT
    Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical


    Original     		PDF M29W400BT M29W400BB 512Kb 256Kb TSOP48 FBGA48 FBGA48 M29W400BB M29W400BT

    RD 24 105 RP

    Abstract: M29W400B M29W400 M29W400T
    Text: M29W400T M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		PDF M29W400T M29W400B x8/x16, 100ns RD 24 105 RP M29W400B M29W400 M29W400T

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME


    OCR Scan     		PDF M29W400T M29W400B x8/x16, 100ns 10jas CONS48 TSOP48 M29W400T,

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON raD»HlLl Ê'inM l)i!lD(ei M29W400T M29W400B 4 Mb (x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 100ns > FAST PROGRAMMING TIME ■ 10|is by Byte / 1 6|is by Word typical


    OCR Scan     		PDF M29W400T M29W400B x8/x16, 100ns TSOP48 M29W400T,

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON raD»HlLl Ê'inM l)i!lD(ei M29W400T M29W400B 4 Mb (x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 100ns > FAST PROGRAMMING TIME ■ 10|is by Byte / 1 6|is by Word typical


    OCR Scan     		PDF M29W400T M29W400B x8/x16, 100ns TSOP48 M29W400T,

    Untitled

    Abstract: No abstract text available
    Text: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


    OCR Scan     		PDF M29W400B x8/x16, 100ns 10jas M29W400T,

    D-DQ11

    Abstract: 37 zd
    Text: ^7 7. S G S - T H O M S O M29W400T M29W400B N m 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7 V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS • FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME ■ 10|iS by Byte / 16|js by Word typical


    OCR Scan     		PDF M29W400T M29W400B x8/x16, 100ns M29W400T, M29W400T 100ns 120ns 150ns D-DQ11 37 zd

    M29W400

    Abstract: M29W400B M29W400T
    Text: M29W400T k7# . OMGMiDlglLECTMMSl _ M29W400B W. SGS-THOMSON 4 Mb x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME


    OCR Scan     		PDF M29W400T M29W400B x8/x16, 100ns TSOP48 M29W400T, M29W400 M29W400B M29W400T

    ZD37

    Abstract: No abstract text available
    Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME - 1 Ojas p e r B y te /W o rd typ ical


    OCR Scan     		PDF M29W400BT M29W400BB 512Kb 256Kb M29W400BT, FBGA48 BGA-Z00 ZD37

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


    OCR Scan     		PDF M29W400T M29W400B 512Kb 256Kb 10jas