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Abstract: No abstract text available
Text: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z
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M14D5121632A
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M14D5121632A
Abstract: No abstract text available
Text: ESMT M14D5121632A 2K DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
M14D5121632A
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M14D512
Abstract: M14D5121632A M14D5121 M14D5121632A -2.5B CKE 2009 MAKING A10 BGA DDR2-667 emrs3
Text: ESMT M14D5121632A Operation Temperature Condition TC -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle
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M14D5121632A
M14D512
M14D5121632A
M14D5121
M14D5121632A -2.5B
CKE 2009
MAKING A10 BGA
DDR2-667
emrs3
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M14D5121632A
Abstract: M14D512 M14D5121632A -2.5B DDR2-667 DDR2-800 M14D M14D5121
Text: ESMT M14D5121632A DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe DQS, /DQS ; /DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
M14D5121632A
M14D512
M14D5121632A -2.5B
DDR2-667
DDR2-800
M14D
M14D5121
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M14D5121632A (2K) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
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M14D5121632A
Abstract: M14D512
Text: ESMT Preliminary M14D5121632A (2T) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
M14D5121632A
M14D512
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Untitled
Abstract: No abstract text available
Text: ESM T M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
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Untitled
Abstract: No abstract text available
Text: ESMT M14D5121632A 2H DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z Internal pipelined double-data-rate architecture; two data access per clock cycle
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M14D5121632A
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M14D5121632A
Abstract: No abstract text available
Text: ESMT M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
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Untitled
Abstract: No abstract text available
Text: ESM T M14D5121632A 2H DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) Internal pipelined double-data-rate architecture; two data access per clock cycle
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M14D5121632A
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M14D5121632A
Abstract: No abstract text available
Text: ESMT M14D5121632A 2C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
M14D5121632A
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Untitled
Abstract: No abstract text available
Text: ESM T M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) Internal pipelined double-data-rate architecture; two data access per clock cycle
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M14D5121632A
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Untitled
Abstract: No abstract text available
Text: ESM T M14D5121632A 2C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D5121632A
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Untitled
Abstract: No abstract text available
Text: ESMT M14D5121632A 2K DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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