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    DIM250PHM33-TL000

    Abstract: DIM250PHM33-TL
    Text: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM250PHM33-TL000 DS6116-1 LN30665) DIM250PHM33-TL000 DIM250PHM33-TL PDF

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    Abstract: No abstract text available
    Text: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT


    Original     		DIM250PHM33-TL000 DS6116-1 LN30665) PDF