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    DIM1200ESM33-F000

    Abstract: DIM1200ESM33-F
    Text: DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 LN28347 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


    Original     		DIM1200ESM33-F000 DS5831-2 DS5831-3 LN28347) DIM1200ESM33-F000 DIM1200ESM33-F PDF

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    Abstract: No abstract text available
    Text: DIM1200ESM33-F000 Single Switch IGBT Module Replaces DS5831-2 DS5831-3 May 2011 LN28347 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


    Original     		DIM1200ESM33-F000 DS5831-2 DS5831-3 LN28347) PDF